With the rapid development of artificial intelligence(AI)technology,the demand for high-performance and energyefficient computing is increasingly growing.The limitations of the traditional von Neumann computing archit...With the rapid development of artificial intelligence(AI)technology,the demand for high-performance and energyefficient computing is increasingly growing.The limitations of the traditional von Neumann computing architecture have prompted researchers to explore neuromorphic computing as a solution.Neuromorphic computing mimics the working principles of the human brain,characterized by high efficiency,low energy consumption,and strong fault tolerance,providing a hardware foundation for the development of new generation AI technology.Artificial neurons and synapses are the two core components of neuromorphic computing systems.Artificial perception is a crucial aspect of neuromorphic computing,where artificial sensory neurons play an irreplaceable role thus becoming a frontier and hot topic of research.This work reviews recent advances in artificial sensory neurons and their applications.First,biological sensory neurons are briefly described.Then,different types of artificial neurons,such as transistor neurons and memristive neurons,are discussed in detail,focusing on their device structures and working mechanisms.Next,the research progress of artificial sensory neurons and their applications in artificial perception systems is systematically elaborated,covering various sensory types,including vision,touch,hearing,taste,and smell.Finally,challenges faced by artificial sensory neurons at both device and system levels are summarized.展开更多
Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
A vapor deposition method was applied to synthesize zinc oxide（ZnO） nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure...A vapor deposition method was applied to synthesize zinc oxide（ZnO） nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy（SEM） and high resolution transmission electron microscopy（TEM） proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods, which grow along the 0001 direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures.The ZnO nanowires with small diameters tend to show stronger ultraviolet（UV） light emission from the electron-hole recombination near band edge in photoluminescence（PL）, while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.展开更多
Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation...Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.展开更多
Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization proces...Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization processes.To address this issue,herein we propose a self‐repairability strategy for CBRAMs.Amorphous NbSe_(2) was designed as the resistive switching layer,with Cu and Au as the top and bottom electrodes,respectively.The NbSe_(2) CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity,with forming‐free and compliance current‐free resistive switching characteristics,low‐operation voltage,and competitive endurance and retention performance.Most importantly,the self‐repairable behavior is discovered for the first time in CBRAM.The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage.The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe_(2) switching layer has been revealed by a designed broken‐down point approach,which is responsible for the self‐repairable behavior of NbSe_(2) CBRAMs.Our self‐repairable and high‐uniform amorphous NbSe_(2) CBRAM may open the door to the development of memory and storage devices in the future.展开更多
基金supported by the National Natural Science Foundation of China(Nos.U20A20209 and 62304228)the China National Postdoctoral Program for Innovative Talents(No.BX2021326)+3 种基金the China Postdoctoral Science Foundation(No.2021M703310)the Zhejiang Provincial Natural Science Foundation of China(No.LQ22F040003)the Ningbo Natural Science Foundation of China(No.2023J356)the State Key Laboratory for Environment-Friendly Energy Materials(No.20kfhg09).
文摘With the rapid development of artificial intelligence(AI)technology,the demand for high-performance and energyefficient computing is increasingly growing.The limitations of the traditional von Neumann computing architecture have prompted researchers to explore neuromorphic computing as a solution.Neuromorphic computing mimics the working principles of the human brain,characterized by high efficiency,low energy consumption,and strong fault tolerance,providing a hardware foundation for the development of new generation AI technology.Artificial neurons and synapses are the two core components of neuromorphic computing systems.Artificial perception is a crucial aspect of neuromorphic computing,where artificial sensory neurons play an irreplaceable role thus becoming a frontier and hot topic of research.This work reviews recent advances in artificial sensory neurons and their applications.First,biological sensory neurons are briefly described.Then,different types of artificial neurons,such as transistor neurons and memristive neurons,are discussed in detail,focusing on their device structures and working mechanisms.Next,the research progress of artificial sensory neurons and their applications in artificial perception systems is systematically elaborated,covering various sensory types,including vision,touch,hearing,taste,and smell.Finally,challenges faced by artificial sensory neurons at both device and system levels are summarized.
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金financially supported by the National Natural Science Foundation of China (No. 61428403 and 51422106)
文摘A vapor deposition method was applied to synthesize zinc oxide（ZnO） nanowires and nanorods with diameter from 40 nm to 500 nm, length from 1 μm to 70 μm by adjusting the flow rate of argon, oxygen and the pressure during growth. Results of scanning electron microscopy（SEM） and high resolution transmission electron microscopy（TEM） proved the hexagonal wurtzite structure of the synthesized ZnO nanowires or nanorods, which grow along the 0001 direction. The results show that the growth conditions strongly impact the morphology, growth rate and optical properties of the ZnO nanostructures.The ZnO nanowires with small diameters tend to show stronger ultraviolet（UV） light emission from the electron-hole recombination near band edge in photoluminescence（PL）, while those with larger diameters tend to exhibit PL spectra dominated by the broad green light emission due to the defects.
基金This work was supported in part by the National Natural Science Foundation of China(U20A20209 and 61874125)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB32050204)+1 种基金the Zhejiang Provincial Natural Science Foundation of China(LD19E020001 and LQ22F040003)the State Key Laboratory of Silicon Materials(SKL2021-03).
文摘Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy.Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing attention.At present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices.Here,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere.This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with light.Moreover,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism.Hence,this study is an important step towards the next generation of artificial visual systems.
基金supported by the National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Key Research and Development Program(No.2021C01030)“Pioneer”and“Leading Goose”R&D Program of Zhejiang Province(No.2021C01SA301612).
文摘Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization processes.To address this issue,herein we propose a self‐repairability strategy for CBRAMs.Amorphous NbSe_(2) was designed as the resistive switching layer,with Cu and Au as the top and bottom electrodes,respectively.The NbSe_(2) CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity,with forming‐free and compliance current‐free resistive switching characteristics,low‐operation voltage,and competitive endurance and retention performance.Most importantly,the self‐repairable behavior is discovered for the first time in CBRAM.The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage.The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe_(2) switching layer has been revealed by a designed broken‐down point approach,which is responsible for the self‐repairable behavior of NbSe_(2) CBRAMs.Our self‐repairable and high‐uniform amorphous NbSe_(2) CBRAM may open the door to the development of memory and storage devices in the future.
