In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted ...High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.展开更多
For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter ar...For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.展开更多
As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparative...As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances.展开更多
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
基金the National Key Technologies R&D Program of China(Grant Nos.2019YFA0705203 and 2018YFA0209104)Major Program of the National Natural Science Foundation of China(Grant No.61790581)Aeronautical Science Foundation of China(Grant No.20182436004).
文摘High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.
基金This work was supported by the National Key Technologies R&D Program of China(No.2019YFA0705203,2019YFA070104)the National Natural Science Foundation of China(No.62004189)the State Key Laboratory of Special Rare Metal Materials,Northwest Rare Metal Materials Research Institute(No.SKL2023K00X).
文摘For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.
基金This work was supported by the Ministry of Science and Technology of China(No.2018YFA0209102)the National Natural Science Foundation of China(Nos.11727807,51725101,51672050,and 61790581).
文摘As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances.
