The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventio...The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately.To overcome such limitation,organic-2D composites with high mechanical properties are proposed as the active layer of RRAM.Moreover,we enhance the reliability of the device by ZrO_(2)insertion layer,resulting in stable synaptic performance.The Ag/PVA:h-BN/ZrO_(2)/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5×10^(2),a~2400 cycles endurance and a long retention time(>6×10^(3)s),which are essential for the development of high-performance RRAMs.We also study the possible synaptic mechanism and dynamic plasticity of the memory device,observing the transition from short-term potentiation(STP)to long-term potentiation(LTP)under the effect of continuous voltage pulses.Moreover,the device exhibits both long-term depression(LTD)and paired-pulse facili-tation(PPF)properties,which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses,representing promising avenues for the devel-opment of advanced neuromorphic computing systems.展开更多
基金supported by Guangxi Natural Science Foundation(No.2022GXNSFBA035487)Guangxi Science and Technology Project(No.AD21220056,AD19110038)+2 种基金National Natural Science Foundation of China(No.62174041,52061009,52262022)Yunnan Province Major Science and Technology Projects(202102AB080008-2)Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(No.DH202203,DH202202,DH202221,DH202222,DH202214).
文摘The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately.To overcome such limitation,organic-2D composites with high mechanical properties are proposed as the active layer of RRAM.Moreover,we enhance the reliability of the device by ZrO_(2)insertion layer,resulting in stable synaptic performance.The Ag/PVA:h-BN/ZrO_(2)/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5×10^(2),a~2400 cycles endurance and a long retention time(>6×10^(3)s),which are essential for the development of high-performance RRAMs.We also study the possible synaptic mechanism and dynamic plasticity of the memory device,observing the transition from short-term potentiation(STP)to long-term potentiation(LTP)under the effect of continuous voltage pulses.Moreover,the device exhibits both long-term depression(LTD)and paired-pulse facili-tation(PPF)properties,which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses,representing promising avenues for the devel-opment of advanced neuromorphic computing systems.
