Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems.Here,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP si...Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems.Here,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well(QW)nanowire array light emitting diodes(LEDs)with multi-wavelength and high-speed operations.Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of~1.35 and~1.55μm,respectively,ideal for low-loss optical communications.As a result of simultaneous contributions from both axial and radial QWs,broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of~17μW.A large spectral blueshift is observed with the increase of applied bias,which is ascribed to the band-filling effect based on device simulation,and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range.Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate,leading to QW formation with different emission wavelengths.Furthermore,high-speed GHz-level modulation and small pixel size LED are demonstrated,showing the promise for ultrafast operation and ultracompact integration.The voltage and pitch size controlled multi-wavelength highspeed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.展开更多
Semiconductor nanowires(NWs)could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration,ultracompact footprint,and low energy consumption.Here,we report Ⅲ-Ⅴsemic...Semiconductor nanowires(NWs)could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration,ultracompact footprint,and low energy consumption.Here,we report Ⅲ-Ⅴsemiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths,as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs.From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm,an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation,as confirmed by the far-field polarization dependence measurements and numerical modeling.From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths,multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation.The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers,even to the deep ultraviolet and THz range.展开更多
Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies,which require compact,multiwavelength laser sources at the tele...Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies,which require compact,multiwavelength laser sources at the telecom band.Here,we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core–shell nanowire array epitaxially grown on InP substrate by selective area epitaxy.To reduce optical loss and tailor the cavity mode,a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality.Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry–Pérot cavity between the top nanowire facet and bottom nanowire/SiO_(2) mask interface,stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of~28.2μJ cm^(−2) per pulse and a high characteristic temperature of~128 K.By fine-tuning the In composition of the quantum wells,room temperature,single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range,spanning from 940 nm to the telecommunication O and C bands.Our research indicates that through a carefully designed facet engineering strategy,highly ordered,uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate,paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.展开更多
文摘Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems.Here,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well(QW)nanowire array light emitting diodes(LEDs)with multi-wavelength and high-speed operations.Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of~1.35 and~1.55μm,respectively,ideal for low-loss optical communications.As a result of simultaneous contributions from both axial and radial QWs,broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of~17μW.A large spectral blueshift is observed with the increase of applied bias,which is ascribed to the band-filling effect based on device simulation,and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range.Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate,leading to QW formation with different emission wavelengths.Furthermore,high-speed GHz-level modulation and small pixel size LED are demonstrated,showing the promise for ultrafast operation and ultracompact integration.The voltage and pitch size controlled multi-wavelength highspeed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.
基金This work is supported by the National Key R&D Program of China(Grant Nos.2018YFA0307200 and 2017YFA0303800)the National Natural Science Foundation of China(Grant Nos.61775183,11634010,61905196,and 62005222)+1 种基金the Fundamental Research Funds for the Central Universities(Grant Nos.3102017jc01001,3102019JC008,and 3102019110x032)the Natural Science Basic Research Program of Shaanxi Province(2020JQ 222).
文摘Semiconductor nanowires(NWs)could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration,ultracompact footprint,and low energy consumption.Here,we report Ⅲ-Ⅴsemiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths,as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs.From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm,an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation,as confirmed by the far-field polarization dependence measurements and numerical modeling.From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths,multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation.The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers,even to the deep ultraviolet and THz range.
基金supported by the Key Research and Development Program(2022YFA1404800)the National Natural Science Foundation of China(62375226,62375225,12374359,62105267)+1 种基金the Fundamental Research Funds for the Central Universities(23GH02023)the Analytical&Testing Center of Northwestern Polytechnical University and the Australian Research Council.The Australian National Fabrication Facility ACT Node is acknowledged for access to the epitaxial growth facilities.
文摘Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies,which require compact,multiwavelength laser sources at the telecom band.Here,we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core–shell nanowire array epitaxially grown on InP substrate by selective area epitaxy.To reduce optical loss and tailor the cavity mode,a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality.Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry–Pérot cavity between the top nanowire facet and bottom nanowire/SiO_(2) mask interface,stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of~28.2μJ cm^(−2) per pulse and a high characteristic temperature of~128 K.By fine-tuning the In composition of the quantum wells,room temperature,single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range,spanning from 940 nm to the telecommunication O and C bands.Our research indicates that through a carefully designed facet engineering strategy,highly ordered,uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate,paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.
