A novel online Differential Mode Group Delay(DMGD)monitoring method based on four-wave mixing(FWM) in few mode fiber(FMF) transmission system is proposed, and the DMGD monitoring is achieved on the whole range of 15-5...A novel online Differential Mode Group Delay(DMGD)monitoring method based on four-wave mixing(FWM) in few mode fiber(FMF) transmission system is proposed, and the DMGD monitoring is achieved on the whole range of 15-50 ps/km. Detection principle is deduced and relationship of the power of idler waves and DMGD is analyzed. With various chromatic dispersion(CD)values, different line widths and different optical signal noise ratio(OSNR) values, the simulations are carried out. The simulation results show that this new DMGD monitoring method is less affected by different line widths and has a high tolerance for OSNR.展开更多
A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selec...A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.展开更多
This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-...This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.展开更多
Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus...Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus（BP） can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material,which greatly affect its inherent physical characteristics.How to identify strained micro structure changes becomes an important problem.The calculated Raman spectra disclose that the Ag-2 mode and B（2g） mode will split and the Raman spectra appear,while the Ag-1 mode is shifted to low-frequency region.The deformation induced by strain will effectively change the Raman mode position and intensity,this can be used to identify phosphorus changes.展开更多
基金supported by the National Science Foundation of China (61574080)Research Center of Optical Communications Engineering & Technology,Jiangsu Province (ZXF201803)
文摘A novel online Differential Mode Group Delay(DMGD)monitoring method based on four-wave mixing(FWM) in few mode fiber(FMF) transmission system is proposed, and the DMGD monitoring is achieved on the whole range of 15-50 ps/km. Detection principle is deduced and relationship of the power of idler waves and DMGD is analyzed. With various chromatic dispersion(CD)values, different line widths and different optical signal noise ratio(OSNR) values, the simulations are carried out. The simulation results show that this new DMGD monitoring method is less affected by different line widths and has a high tolerance for OSNR.
文摘A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.
基金supported in part by the National Natural Science Foundation of China(Grant Nos.51602160 and 61605086)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20150842)the Talent Project of Nanjing University of Posts and Telecommunications(NUPTSF)(Grant No.NY222127)。
文摘This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.
基金Project supported by the National Science Foundation of China(Nos.61505085,61574080,61274127)the Innovation Project of Jiangsu Graduate Student,China(No.SJLX15_0379)
文摘Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus（BP） can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material,which greatly affect its inherent physical characteristics.How to identify strained micro structure changes becomes an important problem.The calculated Raman spectra disclose that the Ag-2 mode and B（2g） mode will split and the Raman spectra appear,while the Ag-1 mode is shifted to low-frequency region.The deformation induced by strain will effectively change the Raman mode position and intensity,this can be used to identify phosphorus changes.
