Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinemen...Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinement and coupling between the Ge_(2)Sb_(2)Te_(5)(GST)QD and the tungsten electrodes,the device shows a threshold current and voltage as small as 2.50μA and 1.08 V,respectively.Our process is highlighted with good controllability and repeatability with 100%yield,making it a promising fabrication process for nanoelectronics.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61076077 and 61106120the National Basic Research Program of China under Grant No 2011CB922103.
文摘Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinement and coupling between the Ge_(2)Sb_(2)Te_(5)(GST)QD and the tungsten electrodes,the device shows a threshold current and voltage as small as 2.50μA and 1.08 V,respectively.Our process is highlighted with good controllability and repeatability with 100%yield,making it a promising fabrication process for nanoelectronics.
