The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs)has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm ...The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs)has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm silicon dioxide layer,to thin the dielectric layer of the back gate.Channel length of the CNT-FETs was changed along with the etching process.The dependence of drain-source current on gate voltage was measured to analyze the performance of the CNT-FETs,including the transconductance,carrier mobility,current ON/OFF ratio,etc.The results indicate that the devices still keep good quality.展开更多
基金supported by the National Outstanding Youth Science Foundation(Grant No.60825407)the National Natural Science Foundation of China(Grant No.60877025)the Beijing Jiaotong University Fund(Grant No.2007XM048)
文摘The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs)has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm silicon dioxide layer,to thin the dielectric layer of the back gate.Channel length of the CNT-FETs was changed along with the etching process.The dependence of drain-source current on gate voltage was measured to analyze the performance of the CNT-FETs,including the transconductance,carrier mobility,current ON/OFF ratio,etc.The results indicate that the devices still keep good quality.
