The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additiv...The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80~C. Samples＇ surface morphology was observed by scanning electron microscope （SEM）. It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes. Si （100） plane was covered with many small Si-mountaln ranges or long V-shape channels arranged in a crisscross pat- tern. For （110） plane and （111） plane, they were full of a lot of triangle pit-traps （or quadrilateral holes） and twisted earthworm trap pits, respectively. The measured reflectance of the sample was 20.5% at wavelength range of 400--900 nm. These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces. This method should be very valuable for mc-Si solar cells.展开更多
We give an interface between two same media whose orientation of optical axis, however, is rotated, and describe a method in detail to show how to calculate reflectance coefficient in this interface. We also give the ...We give an interface between two same media whose orientation of optical axis, however, is rotated, and describe a method in detail to show how to calculate reflectance coefficient in this interface. We also give the theoretical simulation of the reflectance coefficient and discuss the effect of the rotation angle and the direction of electron vector on the reflectance coefficient. For the un-polarized lights the theoretical calculated results show that the reflectance coefficients (rx1 and ry1) are very small when the rotated angle is small, and they arrive at the maximum value as the rotation angle is equal to a decided value. For the polarized light, when the rotation angle is small, the reflectance coefficients (rx1 and ry1) are also small. Only when the rotation angle increases to a certain extent, they can reach the maximum values and be strongly affected by the direction of electronic vector. However, this effect on the reflectance coefficient in the direction of the maximum refraction is different from that in the direction of minimum refraction.展开更多
基金supported by the Shanghai Aerospace Foundation (Grant No. GC072003)
文摘The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80~C. Samples＇ surface morphology was observed by scanning electron microscope （SEM）. It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes. Si （100） plane was covered with many small Si-mountaln ranges or long V-shape channels arranged in a crisscross pat- tern. For （110） plane and （111） plane, they were full of a lot of triangle pit-traps （or quadrilateral holes） and twisted earthworm trap pits, respectively. The measured reflectance of the sample was 20.5% at wavelength range of 400--900 nm. These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces. This method should be very valuable for mc-Si solar cells.
文摘We give an interface between two same media whose orientation of optical axis, however, is rotated, and describe a method in detail to show how to calculate reflectance coefficient in this interface. We also give the theoretical simulation of the reflectance coefficient and discuss the effect of the rotation angle and the direction of electron vector on the reflectance coefficient. For the un-polarized lights the theoretical calculated results show that the reflectance coefficients (rx1 and ry1) are very small when the rotated angle is small, and they arrive at the maximum value as the rotation angle is equal to a decided value. For the polarized light, when the rotation angle is small, the reflectance coefficients (rx1 and ry1) are also small. Only when the rotation angle increases to a certain extent, they can reach the maximum values and be strongly affected by the direction of electronic vector. However, this effect on the reflectance coefficient in the direction of the maximum refraction is different from that in the direction of minimum refraction.
