The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-a...The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.展开更多
基金National Key Research and Development Program of China(2023YFA1609000)National Natural Science Foundation of China(62474190,U22B2043,U2267210)。
文摘The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.
