Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change pro...Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations展开更多
The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dos...The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。展开更多
文摘Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations
文摘The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。
