We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at -0.74 eV is remarka...We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at -0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.展开更多
基金supported by the Si-Based Laser Initiative of the Multidisciplinary University Research Initiative (MURI)sponsored by the Air Force Office of Scientific Research (AFOSR), USAsupervised by Dr. Gernot Pomrenke.
文摘We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at -0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.
