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Thermal Performance of Low-Melting-Temperature Alloy Thermal Interface Materials 被引量:5
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作者 e.yang Hongyan Guo +2 位作者 Jingdong Guo Jianku Shang Mingguang Wang 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2014年第2期290-294,共5页
Thermal resistance of low-melting-temperature alloy (LMTA) thermal interface materials (TIMs) was measured by laser flash method before and after different stages of heating. The results showed that the thermal pe... Thermal resistance of low-melting-temperature alloy (LMTA) thermal interface materials (TIMs) was measured by laser flash method before and after different stages of heating. The results showed that the thermal performance of the LMTA TIMs was degraded during the heating process. It is suggested that the degradation may mainly be attributed to the interfacial reaction between the Cu and the molten LMTAs. Due to the fast growth rate of intermetallic compound (IMC) at the solid-liquid interface, a thick brittle IMC is layer formed at the interface, which makes cracks easy to initiate and expand. Otherwise, the losses of indium and tin contents in the LMTA during the interfacial reaction will make the melting point of the TIM layer increase, and so, the TIM layer will not melt at the operating temperature. 展开更多
关键词 Thermal interface materials Low melting point alloy Thermal resistance
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晶圆边缘缺陷的控制策略
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作者 M.F.Hsu J.H.Yang +4 位作者 e.yang H.Chen M.Ng M.Li C.Perry-Sullivan 《集成电路应用》 2009年第9期25-25,28,共2页
在晶圆边缘芯片上的系统性工艺缺陷进入到晶圆内部芯片之前,如果发现并解决这些缺陷问题,可以防止产品成品率损失并加快成品率的提升速度。
关键词 边缘缺陷 控制策略 晶圆 工艺缺陷 提升速度 成品率 芯片
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