Perovskite light-emitting diodes(PeLEDs)have shown outstanding potential in next-generation lighting and display owing to the advantages of broad spectral tunability,excellent color purity,high photoluminescence quant...Perovskite light-emitting diodes(PeLEDs)have shown outstanding potential in next-generation lighting and display owing to the advantages of broad spectral tunability,excellent color purity,high photoluminescence quantum yields(PLQYs),and low processing cost.Device efficiency and stability are crucial indicators to evaluate whether a PeLED can meet commercial application requirements.In this review,we first discuss strategies for achieving high external quantum efficiencies(EQEs),including controlling charge injection and balance,enhancing radiative recombination,and improving light outcoupling efficiency.Next,we review recent advances in operational stability of PeLEDs and emphasize the mechanisms of degradation in PeLEDs,including ion migration,structural transformations,chemical interactions,and thermal degradation.Through detailed analysis and discussion,this review aims to facilitate progress and innovation in highly efficient and stable PeLEDs,which have significant promise for display and solid-state lighting technologies,as well as other emerging applications.展开更多
Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1,2],narrow emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate...Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1,2],narrow emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate for light-emitting diode(LED)applications.Perovskite LEDs(PeLEDs)have attracted considerable attention since the initial report of room-temperature electroluminescence(EL)from halide perovskites in 2014[5].展开更多
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allo...Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.展开更多
Electronic skin,a class of wearable electronic sensors that mimic the functionalities of human skin,has made remarkable success in applications including health monitoring,human-machine interaction and electronic-biol...Electronic skin,a class of wearable electronic sensors that mimic the functionalities of human skin,has made remarkable success in applications including health monitoring,human-machine interaction and electronic-biological interfaces.While electronic skin continues to achieve higher sensitivity and faster response,its ultimate performance is fundamentally limited by the nature of low-frequency AC currents.Herein,highly sensitive skin-like wearable optical sensors are demonstrated by embedding glass micro/nanofibers(MNFs)in thin layers of polydimethylsiloxane(PDMS).Enabled by the transition from guided modes into radiation modes of the waveguiding MNFs upon external stimuli,the skin-like optical sensors show ultrahigh sensitivity(1870 k·Pa^-1),low detection limit(7 mPa)and fast response(10μs)for pressure sensing,significantly exceeding the performance metrics of state-of-the-art electronic skins.Electromagnetic interference(EMI)-free detection of high-frequency vibrations,wrist pulse and human voice are realized.Moreover,a five-sensor optical data glove and a 2×2-MNF tactile sensor are demonstrated.These initial results pave the way toward a new category of optical devices ranging from ultrasensitive wearable sensors to optical skins.展开更多
Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display applications.Despite the encouraging advances in t...Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display applications.Despite the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different devices.Here,we report a comprehensive study on the characterizations of QLEDs using various methods.We show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device efficiency.Larger errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay curves.Finally,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.展开更多
The heavy p-doping effect and intrinsic defectsof tin-based perovskites are two major challenges, whichgreatly limit the device performance of tin-based perovskitesolar cells (PSCs). In this study, a novel n-type orga...The heavy p-doping effect and intrinsic defectsof tin-based perovskites are two major challenges, whichgreatly limit the device performance of tin-based perovskitesolar cells (PSCs). In this study, a novel n-type organic smallmolecule dopant, namely, NDI2HD-Br2, is proposed to sy-nergistically alleviate the intrinsic severe p-type self-dopingand passivate the Sn-related defects of tin-based perovskites.Specifically, the carbonyl groups (C=O) with high electrondensity in the NDI2HD-Br2 can donate additional electrons tothe perovskite band edge, resulting in the conversion of thetin-based perovskite from a p-type to a weak n-type semi-conductor (i.e., up-shifting the Fermi level by 0.15 eV). By thisway, we achieve a power conversion efficiency (PCE) of 15.01%with a high open-circuit voltage of 0.95 V for the tin-basedPSCs. Moreover, the NDI2HD-Br2 incorporated devices ex-hibit excellent long-term stability that maintains 81% of theinitial PCE after 1500 h of storage in a nitrogen environment.This study provides a new pathway to modulate electronicstructures and passivate intrinsic defects of tin-based per-ovskites for efficient and stable solar cells.展开更多
The demand for high-performance X-ray detectors leads to material innovationfor efficient photoelectric conversion and carrier transfer. However, currentX-ray detectors are often susceptible to chemical and irradiatio...The demand for high-performance X-ray detectors leads to material innovationfor efficient photoelectric conversion and carrier transfer. However, currentX-ray detectors are often susceptible to chemical and irradiation instability,complex fabrication processes, hazardous components, and difficult compatibility.Here, we investigate a two-dimensional (2D) material with a relativelylow atomic number, Ti_(3)C_(2)T_(x) MXenes, and single crystal silicon for X-ray detectionand single-pixel imaging (SPI). We fabricate a Ti_(3)C_(2)T_(x) MXene/Si X-raydetector demonstrating remarkable optoelectronic performance. This detectorexhibits a sensitivity of 1.2 × 10^(7) μC Gyair^(-1) cm^(-2), a fast response speed with arise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s^(-1).These superior performances are attributed to the unique charge couplingbehavior under X-ray irradiation via intrinsic polaron formation. The deviceremains stable even after 50 continuous hours of high-dose X-ray irradiation.Our device fabrication process is compatible with silicon-based semiconductortechnology. Our work suggests new directions for eco-friendly X-ray detectorsand low-radiation imaging system.展开更多
基金supported by the National Key Research and Development Program of China(No.2022YFA1204800)the Scientific Research Innovation Capability Support Project for Young Faculty(No.ZYGXQNJSKYCXNLZCXM-I25),China+1 种基金the National Natural Science Foundation of China(No.62274144)the Zhejiang Provincial Government,China.
文摘Perovskite light-emitting diodes(PeLEDs)have shown outstanding potential in next-generation lighting and display owing to the advantages of broad spectral tunability,excellent color purity,high photoluminescence quantum yields(PLQYs),and low processing cost.Device efficiency and stability are crucial indicators to evaluate whether a PeLED can meet commercial application requirements.In this review,we first discuss strategies for achieving high external quantum efficiencies(EQEs),including controlling charge injection and balance,enhancing radiative recombination,and improving light outcoupling efficiency.Next,we review recent advances in operational stability of PeLEDs and emphasize the mechanisms of degradation in PeLEDs,including ion migration,structural transformations,chemical interactions,and thermal degradation.Through detailed analysis and discussion,this review aims to facilitate progress and innovation in highly efficient and stable PeLEDs,which have significant promise for display and solid-state lighting technologies,as well as other emerging applications.
基金supported by the National Natural Science Foundation of China(NSFC)(61975180,62005243)KunPeng Programme of Zhejiang Province(D.D.)+2 种基金Zhejiang University Education Foundation Global Partnership Fundthe Natural Science Foundation of Zhejiang Province(LR21F050003)Fundamental Research Funds for the Central Universities(2020QNA5002)。
文摘Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1,2],narrow emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate for light-emitting diode(LED)applications.Perovskite LEDs(PeLEDs)have attracted considerable attention since the initial report of room-temperature electroluminescence(EL)from halide perovskites in 2014[5].
基金the National Key Research and Development Program of China (2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory (2021SLABFK02)the National Natural Science Foundation of China (21961160720)。
文摘Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
基金This work was supported by the National Key Research and Development Program of China(2016YFB1001300)the National Natural Science Foundation of China(No.11527901)the Fundamental Research Funds for the Central Universities.
文摘Electronic skin,a class of wearable electronic sensors that mimic the functionalities of human skin,has made remarkable success in applications including health monitoring,human-machine interaction and electronic-biological interfaces.While electronic skin continues to achieve higher sensitivity and faster response,its ultimate performance is fundamentally limited by the nature of low-frequency AC currents.Herein,highly sensitive skin-like wearable optical sensors are demonstrated by embedding glass micro/nanofibers(MNFs)in thin layers of polydimethylsiloxane(PDMS).Enabled by the transition from guided modes into radiation modes of the waveguiding MNFs upon external stimuli,the skin-like optical sensors show ultrahigh sensitivity(1870 k·Pa^-1),low detection limit(7 mPa)and fast response(10μs)for pressure sensing,significantly exceeding the performance metrics of state-of-the-art electronic skins.Electromagnetic interference(EMI)-free detection of high-frequency vibrations,wrist pulse and human voice are realized.Moreover,a five-sensor optical data glove and a 2×2-MNF tactile sensor are demonstrated.These initial results pave the way toward a new category of optical devices ranging from ultrasensitive wearable sensors to optical skins.
基金supported by National Natural Science Foundation of China (21975220,91833303,21922305,21873080,21703202,62122034,and 61875082)Key Research and Development Project of Zhejiang Province (2020C01001)+1 种基金National Key Research and Development Program of China (2021YFB3601700)China Postdoctoral Science Foundation (2021M702800).
文摘Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display applications.Despite the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different devices.Here,we report a comprehensive study on the characterizations of QLEDs using various methods.We show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device efficiency.Larger errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay curves.Finally,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.
基金financially supported by the National Key R&D Program of China: Strategic International lnnovation Cooperation (2024YFE0209400)the National Natural Science Foundation of China (NSFC) (52402104 and 52373186)。
文摘The heavy p-doping effect and intrinsic defectsof tin-based perovskites are two major challenges, whichgreatly limit the device performance of tin-based perovskitesolar cells (PSCs). In this study, a novel n-type organic smallmolecule dopant, namely, NDI2HD-Br2, is proposed to sy-nergistically alleviate the intrinsic severe p-type self-dopingand passivate the Sn-related defects of tin-based perovskites.Specifically, the carbonyl groups (C=O) with high electrondensity in the NDI2HD-Br2 can donate additional electrons tothe perovskite band edge, resulting in the conversion of thetin-based perovskite from a p-type to a weak n-type semi-conductor (i.e., up-shifting the Fermi level by 0.15 eV). By thisway, we achieve a power conversion efficiency (PCE) of 15.01%with a high open-circuit voltage of 0.95 V for the tin-basedPSCs. Moreover, the NDI2HD-Br2 incorporated devices ex-hibit excellent long-term stability that maintains 81% of theinitial PCE after 1500 h of storage in a nitrogen environment.This study provides a new pathway to modulate electronicstructures and passivate intrinsic defects of tin-based per-ovskites for efficient and stable solar cells.
基金National Natural Science Foundation of China,Grant/Award Numbers:52090030,52090031,92164106,U22A2076Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Grant/Award Number: 2022SZ-TD011+1 种基金National KeyResearch and Development Program ofChina, Grant/Award Numbers:2022YFA1204300, 2022YFA1204304,2022YFA1204900Fundamental ResearchFunds for the Central Universities,Grant/Award Number: 2021FZZX001-17。
文摘The demand for high-performance X-ray detectors leads to material innovationfor efficient photoelectric conversion and carrier transfer. However, currentX-ray detectors are often susceptible to chemical and irradiation instability,complex fabrication processes, hazardous components, and difficult compatibility.Here, we investigate a two-dimensional (2D) material with a relativelylow atomic number, Ti_(3)C_(2)T_(x) MXenes, and single crystal silicon for X-ray detectionand single-pixel imaging (SPI). We fabricate a Ti_(3)C_(2)T_(x) MXene/Si X-raydetector demonstrating remarkable optoelectronic performance. This detectorexhibits a sensitivity of 1.2 × 10^(7) μC Gyair^(-1) cm^(-2), a fast response speed with arise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s^(-1).These superior performances are attributed to the unique charge couplingbehavior under X-ray irradiation via intrinsic polaron formation. The deviceremains stable even after 50 continuous hours of high-dose X-ray irradiation.Our device fabrication process is compatible with silicon-based semiconductortechnology. Our work suggests new directions for eco-friendly X-ray detectorsand low-radiation imaging system.
