The limiting factor preventing further performance improvement of the kesterite(sulfide Cu2ZnSnS4(CZTS),selenide Cu2ZnSnS4(CZTSe),and their alloying Cu2Zn Sn(S,Se)4(CZTSSe))thin film solar cells is the large open-circ...The limiting factor preventing further performance improvement of the kesterite(sulfide Cu2ZnSnS4(CZTS),selenide Cu2ZnSnS4(CZTSe),and their alloying Cu2Zn Sn(S,Se)4(CZTSSe))thin film solar cells is the large open-circuit voltage deficit(Voc,def)issue,which is 0.345 V for the current world record device with an efficiency of 12.6%.In this study,SnCl4 and Sn Cl2·2H2O were respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide(DMSO)solution processed CZTSSe solar cells.Different complexations of tin compounds with thiourea(Tu)and DMSO resulted in different reaction pathways from the solution to the absorber material and thus dramatic differences in photovoltaic performance.The coordination of Sn^2+with Tu led to the formation of SnS,ZnS and Cu2S in the precursor film,which converted to selenides first and then fused to CZTSSe,resulting in poor film quality and device performance.The highest efficiency obtained from this film was 8.84%with a Voc,def of 0.391 V.The coordination of Sn4+with DMSO facilitated direct formation of CZTS phase in the precursor film which directly converted to CZTSSe during selenization,resulting in compositional uniform absorber and high device performance.A device with an active area efficiency of 12.2%and a Voc,def of 0.344 V was achieved from the Sn^4+solution processed absorber.Furthermore,CZTSSe/Cd S heterojunction heat treatment(JHT)significantly improved the performance of the Sn^4+device but had slightly negative effect on the Sn2+device.A champion CZTSSe solar cell with a total area efficiency of 12.4%(active area efficiency of 13.6%)and a low Voc,def of 0.297 V was achieved from the Sn^4+solution.Our results demonstrate the preformed uniform CZTSSe phase enabled by Sn4+precursor is the key for the highly efficient CZTSSe absorber.The lowest Voc,def and high efficiency achieved here shines new light on the future of CZTSSe solar cell.展开更多
In the version of the article originally published in volume 64,issue 1,2021 of Sci China Mater(2021,64(1):52–60,https://doi.org/10.1007/s40843-020-1408-x),the chemical formula of Sn(DMSO)_(4)Cl_(4)(page 54,8^(th) li...In the version of the article originally published in volume 64,issue 1,2021 of Sci China Mater(2021,64(1):52–60,https://doi.org/10.1007/s40843-020-1408-x),the chemical formula of Sn(DMSO)_(4)Cl_(4)(page 54,8^(th) line in the left column;page 56,4^(th) and 6^(th) lines from the bottom of left column and in Equations(6 and 7)in the right column)was miswritten.The correct formula should be as below:SN(DMSO)_(2)CL_(4).展开更多
This paper describes a facile method of preparing cubic Au nanoframes with open structures via the galvanic replacement reaction between Ag nanocubes and AuCl_(2)^(-).A mechanistic study of the reaction revealed that ...This paper describes a facile method of preparing cubic Au nanoframes with open structures via the galvanic replacement reaction between Ag nanocubes and AuCl_(2)^(-).A mechanistic study of the reaction revealed that the formation of Au nanoframes relies on the diffusion of both Au and Ag atoms.The effect of the edge length and ridge thickness of the nanoframes on the localized surface plasmon resonance peak was explored by a combination of discrete dipole approximation calculations and single nanoparticle spectroscopy.With their hollow and open structures,the Au nanoframes represent a novel class of substrates for applications including surface plasmonics and surface-enhanced Raman scattering.展开更多
基金supported primarily by the National Natural Science Foundation of China(21571106 and U1902218)support from the Postgraduate Research and Practice Innovation Program of Jiangsu Provincesupport from the Molecular Analysis Facility。
文摘The limiting factor preventing further performance improvement of the kesterite(sulfide Cu2ZnSnS4(CZTS),selenide Cu2ZnSnS4(CZTSe),and their alloying Cu2Zn Sn(S,Se)4(CZTSSe))thin film solar cells is the large open-circuit voltage deficit(Voc,def)issue,which is 0.345 V for the current world record device with an efficiency of 12.6%.In this study,SnCl4 and Sn Cl2·2H2O were respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide(DMSO)solution processed CZTSSe solar cells.Different complexations of tin compounds with thiourea(Tu)and DMSO resulted in different reaction pathways from the solution to the absorber material and thus dramatic differences in photovoltaic performance.The coordination of Sn^2+with Tu led to the formation of SnS,ZnS and Cu2S in the precursor film,which converted to selenides first and then fused to CZTSSe,resulting in poor film quality and device performance.The highest efficiency obtained from this film was 8.84%with a Voc,def of 0.391 V.The coordination of Sn4+with DMSO facilitated direct formation of CZTS phase in the precursor film which directly converted to CZTSSe during selenization,resulting in compositional uniform absorber and high device performance.A device with an active area efficiency of 12.2%and a Voc,def of 0.344 V was achieved from the Sn^4+solution processed absorber.Furthermore,CZTSSe/Cd S heterojunction heat treatment(JHT)significantly improved the performance of the Sn^4+device but had slightly negative effect on the Sn2+device.A champion CZTSSe solar cell with a total area efficiency of 12.4%(active area efficiency of 13.6%)and a low Voc,def of 0.297 V was achieved from the Sn^4+solution.Our results demonstrate the preformed uniform CZTSSe phase enabled by Sn4+precursor is the key for the highly efficient CZTSSe absorber.The lowest Voc,def and high efficiency achieved here shines new light on the future of CZTSSe solar cell.
文摘In the version of the article originally published in volume 64,issue 1,2021 of Sci China Mater(2021,64(1):52–60,https://doi.org/10.1007/s40843-020-1408-x),the chemical formula of Sn(DMSO)_(4)Cl_(4)(page 54,8^(th) line in the left column;page 56,4^(th) and 6^(th) lines from the bottom of left column and in Equations(6 and 7)in the right column)was miswritten.The correct formula should be as below:SN(DMSO)_(2)CL_(4).
基金This work was supported in part by a Director’s Pioneer Award from the NIH(5DPOD000798,Y.X.)the Air Force Office of Scientific Research(D.S.G.and Y.C.)+1 种基金the National Science Foundation(DMR 0520567,D.S.G.and Y.C.)the National Natural Science Foundation of China(10525419,60736041,and 10874238,Z.Y.L.)。
文摘This paper describes a facile method of preparing cubic Au nanoframes with open structures via the galvanic replacement reaction between Ag nanocubes and AuCl_(2)^(-).A mechanistic study of the reaction revealed that the formation of Au nanoframes relies on the diffusion of both Au and Ag atoms.The effect of the edge length and ridge thickness of the nanoframes on the localized surface plasmon resonance peak was explored by a combination of discrete dipole approximation calculations and single nanoparticle spectroscopy.With their hollow and open structures,the Au nanoframes represent a novel class of substrates for applications including surface plasmonics and surface-enhanced Raman scattering.
