Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionali...Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.展开更多
In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can ef...In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic plasticity.The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term potentiation.Furthermore,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced.These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.展开更多
基金supported by Shandong Postdoctoral Science Foundation,China(No.SDCX-ZG-202400331)funded by Qingdao Postdoctoral Project,China(No.QDBSH20240102147)the Natural Science Basic Research Program of Shaanxi(Program No.2023-JC-YB-400).
文摘Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.
基金the by the Natural Science Foundation of Shandong Province,China(ZR2020QF104)Key Research and Development Program of Shandong Province,China(2019GGX102067).
文摘In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic plasticity.The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term potentiation.Furthermore,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced.These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
