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The study of synaptic plasticity in the ZnO memristor elements for neuromorphic AI
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作者 R.V.Tominov Z.E.Vakulov +2 位作者 d.s.j.rodriguez I.S.Ugryumov V.A.Smirnov 《Journal of Advanced Dielectrics》 2025年第4期31-35,共5页
The paper presents the results of experimental studies of synaptic plasticity in a memristive memory element based on nanocrystalline ZnO films grown by pulsed laser deposition.The obtained results can be used in the ... The paper presents the results of experimental studies of synaptic plasticity in a memristive memory element based on nanocrystalline ZnO films grown by pulsed laser deposition.The obtained results can be used in the development of technological bases for the formation of high-performance multi-level artificial synapses for elements of neuroelectronics and hardware neural networks. 展开更多
关键词 Neuromorphic systems RERAM multi-level resistive switching synaptic plasticity ZnO memristor elements
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