Surface potentials in the vicinity of V-pits(cone bottom) and U-pits(blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet(UV) light-assisted Kelvin probe force microscopy(KPFM). Th...Surface potentials in the vicinity of V-pits(cone bottom) and U-pits(blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet(UV) light-assisted Kelvin probe force microscopy(KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V-and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit(30 n_0) and Upit(15 n_0) are higher than that at planar surface(n_0). Under UV light, for V-pit, the electron concentration at the cone bottom(4.93×10^(11) n_0) is lower than that at the surrounding planar surface(5.68×10^(13) n_0). For U-pit, the electron concentration at the blunt bottom is 1.35×10^(12) n_0, which is lower than that at the surrounding planar surface(6.13×10^(13) n_0). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface.展开更多
基金supported by the National Key R&D Program of China(Grant No.2016YFB0400101)the National Science Fund for Distinguished Young Scholars(Grant No.61725403)+8 种基金the National Natural Science Foundation of China(Grant Nos.61574142,61322406,61704171,and11705206)the National Natural Science Foundation of China(Grant No.61774065)the Key Program of the International Partnership Program of Chinese Academy of Sciences(Grant No.181722KYSB20160015)the Special Project for Inter-government Collaboration of the State Key Research and Development Program(Grant No.2016YFE0118400)the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Jilin Provincial Science&Technology Department(Grant No.20180201026GX)the CAS Interdisciplinary Innovation Team,and the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2015171)the support of King Abdullah University of Science and Technology(KAUST)Baseline(Grant No.BAS/1/1664-01-01)the Competitive Research(Grant No.URF/1/3437-01-01)Gulf Cooperation Council(GCC)Research Council(Grant No.REP/1/3189-01-01)
文摘Surface potentials in the vicinity of V-pits(cone bottom) and U-pits(blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet(UV) light-assisted Kelvin probe force microscopy(KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V-and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit(30 n_0) and Upit(15 n_0) are higher than that at planar surface(n_0). Under UV light, for V-pit, the electron concentration at the cone bottom(4.93×10^(11) n_0) is lower than that at the surrounding planar surface(5.68×10^(13) n_0). For U-pit, the electron concentration at the blunt bottom is 1.35×10^(12) n_0, which is lower than that at the surrounding planar surface(6.13×10^(13) n_0). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface.
