We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight deg...We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles.During heavy ion irradiation,the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60Co gamma rays before.This could be attributed to more charges trapped caused by 60Co gamma rays,which make GaN devices more vulnerable to SEB.Moreover,the electrical parameters of GaN devices after 60Co gamma and heavy-ion irradiations are presented,such as the output characteristic curve,effective threshold voltages,and leakage current of drain.These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.展开更多
The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled l...The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos. U1532261,U1630141,and 61534008the West Light Foundation of Chinese Academy of Sciences under Grant No. 2018-XBQNXZ-B-003
文摘We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles.During heavy ion irradiation,the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60Co gamma rays before.This could be attributed to more charges trapped caused by 60Co gamma rays,which make GaN devices more vulnerable to SEB.Moreover,the electrical parameters of GaN devices after 60Co gamma and heavy-ion irradiations are presented,such as the output characteristic curve,effective threshold voltages,and leakage current of drain.These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 1630141)
文摘The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.
