Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-Si...Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.展开更多
By means of numerical simulation. the in fluence of gravity on fluid flow,patterns has been simulated.The result shows that with the increase of inclined angle,the velocity of fluid flow decreases and the isotherms be...By means of numerical simulation. the in fluence of gravity on fluid flow,patterns has been simulated.The result shows that with the increase of inclined angle,the velocity of fluid flow decreases and the isotherms become flatter,which suppresses the evolution of channel segregation.展开更多
文摘Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.
文摘By means of numerical simulation. the in fluence of gravity on fluid flow,patterns has been simulated.The result shows that with the increase of inclined angle,the velocity of fluid flow decreases and the isotherms become flatter,which suppresses the evolution of channel segregation.
