Wideband dual polarizations single mode characteristics of silicon slot waveguide is investigated by three dimensional plane-wave expansion method and three dimensional finite difference time domain method.By tuning t...Wideband dual polarizations single mode characteristics of silicon slot waveguide is investigated by three dimensional plane-wave expansion method and three dimensional finite difference time domain method.By tuning the width of the surrounding silicon region of the slot waveguides,320.6 nm wide bandwidth for both quasi-TE and quasi-TM modes can be obtained in an optimized structure,and electric field enhanced in the low index slot zone for quasi-TE fundamental modes is also observed for the whole bandwidth.The investigation proposed in this paper would be served as a basis for designing polarization related silicon photonics devices.展开更多
文摘Wideband dual polarizations single mode characteristics of silicon slot waveguide is investigated by three dimensional plane-wave expansion method and three dimensional finite difference time domain method.By tuning the width of the surrounding silicon region of the slot waveguides,320.6 nm wide bandwidth for both quasi-TE and quasi-TM modes can be obtained in an optimized structure,and electric field enhanced in the low index slot zone for quasi-TE fundamental modes is also observed for the whole bandwidth.The investigation proposed in this paper would be served as a basis for designing polarization related silicon photonics devices.
