Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light e...Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.展开更多
Quantum dot light-emitting diodes(QLEDs)have emerged as a leading platform for next-generation display technologies,gaining substantial research attention in recent years.Among various patterning strategies,direct pho...Quantum dot light-emitting diodes(QLEDs)have emerged as a leading platform for next-generation display technologies,gaining substantial research attention in recent years.Among various patterning strategies,direct photolithography offers distinct advantages through its high resolution,throughput,and process simplicity.However,current direct photolithography approaches face critical limitations in resolution and device performance,primarily arising from surface defect generation and photodamage of quantum dots(QDs)caused by deep-ultraviolet exposure and photochemical byproducts.To overcome these challenges,we present a novel benzophenone-derived photosensitive crosslinker featuring a byproduct-free C–H insertion mechanism with native ligands of QDs.Through precise structure design,the photo-absorption of the crosslinker extends to 365 nm,allowing the long-awaited QD patterning under standard i-line photolithography conditions.The developed crosslinker achieves unprecedented patterning resolution(pixel size≈500 nm)with preserved photoluminescent characteristics.Corresponding QLED devices demonstrate remarkable performance enhancements,including a maximum external quantum efficiency(EQE)of 16.48%and a T95 operational lifetime of 2258.3 h(approximately 2.1 times longer than pristine devices).These advancements establish a promising pathway toward high-resolution and high-performance QLEDs,thereby accelerating the commercialization of high-end optoelectronic devices.展开更多
基金Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003)Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085)+2 种基金Ningbo 3315 Programme (Grant No.2020A-01-B)YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B)Zhujiang Talent Programme (Grant No.2016LJ06C621)。
文摘Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.
基金supported by the National Key R&D Program of China(Nos.2022YFB3606501,2022YFB3602902)the National Natural Science Foundation of China(Nos.62404227 and U23A2092)+7 种基金the China National Postdoctoral Program for Innovative Talents(No.BX20240391)the China Postdoctoral Science Foundation(No.2023M743623)the Key projects of National Natural Science Foundation of China(No.62234004)“Pioneer”and“Leading Goose”R&D Program of Zhejiang(Nos.2024C01191,2024C01092)Ningbo Key Technologies R&D Program(No.2022Z085)Ningbo 3315 Programme(No.2020A-01-B)YONGJIANG Talent Introduction Programme(No.2021A-038-B,2021A-159-G)Ningbo Science and Technology Yongjiang 2035 Key Technology Breakthrough Plan Project(Nos.2025Z079,2024Z146).
文摘Quantum dot light-emitting diodes(QLEDs)have emerged as a leading platform for next-generation display technologies,gaining substantial research attention in recent years.Among various patterning strategies,direct photolithography offers distinct advantages through its high resolution,throughput,and process simplicity.However,current direct photolithography approaches face critical limitations in resolution and device performance,primarily arising from surface defect generation and photodamage of quantum dots(QDs)caused by deep-ultraviolet exposure and photochemical byproducts.To overcome these challenges,we present a novel benzophenone-derived photosensitive crosslinker featuring a byproduct-free C–H insertion mechanism with native ligands of QDs.Through precise structure design,the photo-absorption of the crosslinker extends to 365 nm,allowing the long-awaited QD patterning under standard i-line photolithography conditions.The developed crosslinker achieves unprecedented patterning resolution(pixel size≈500 nm)with preserved photoluminescent characteristics.Corresponding QLED devices demonstrate remarkable performance enhancements,including a maximum external quantum efficiency(EQE)of 16.48%and a T95 operational lifetime of 2258.3 h(approximately 2.1 times longer than pristine devices).These advancements establish a promising pathway toward high-resolution and high-performance QLEDs,thereby accelerating the commercialization of high-end optoelectronic devices.
