Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting d...Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.展开更多
Integrated semiconductor lasers represent essential building blocks for integrated optical components and circuits and their stability in frequency is fundamental for the development of numerous frontier applications ...Integrated semiconductor lasers represent essential building blocks for integrated optical components and circuits and their stability in frequency is fundamental for the development of numerous frontier applications and engineering tasks.When dense optical circuits are considered,the stability of integrated laser sources can be impaired by the thermal cross-talk generated by the action of neighboring components,leading to a deterioration of the long-term system performance(on the scale of seconds).In this work we show the design and the experimental characterization of a silicon nitride photonic integrated circuit(PIC)that is able to frequency stabilize 16semiconductor lasers,simultaneously.A stabilized 50 GHz-spaced two-channel system is demonstrated through the detection of the related beating note and the stability of the resulting waveform is characterized via the use of artificially induced thermal cross-talk stimuli.展开更多
Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting d...Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.展开更多
Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of sil...Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiberto-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories:in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth(in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing.Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits.展开更多
An out-of-plane silicon grating coupler capable of mode-order conversion at the chip–fiber interface is designed and fabricated. Optimization of the structure is performed through finite-difference time-domain simula...An out-of-plane silicon grating coupler capable of mode-order conversion at the chip–fiber interface is designed and fabricated. Optimization of the structure is performed through finite-difference time-domain simulations,and the final device is characterized through far-field profile and transmission measurements. A coupling loss of 3.1 dB to a commercial two-mode fiber is measured for a single TE0→ LP11 mode conversion grating, which includes a conversion penalty of 1.3 dB. Far-field patterns of the excited LP11 mode profile are also reported.展开更多
We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insula...We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.展开更多
基金Engineering and Physical Sciences Research Council(EP/R003076/1,EP/T007303/1,EP/W024772/1)Ministero dell’Universitàe della Ricerca(PRIN(2022H7RR4F))。
文摘Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.
基金Ministero dell'Universitàe della Ricerca(2022H7RR4F)。
文摘Integrated semiconductor lasers represent essential building blocks for integrated optical components and circuits and their stability in frequency is fundamental for the development of numerous frontier applications and engineering tasks.When dense optical circuits are considered,the stability of integrated laser sources can be impaired by the thermal cross-talk generated by the action of neighboring components,leading to a deterioration of the long-term system performance(on the scale of seconds).In this work we show the design and the experimental characterization of a silicon nitride photonic integrated circuit(PIC)that is able to frequency stabilize 16semiconductor lasers,simultaneously.A stabilized 50 GHz-spaced two-channel system is demonstrated through the detection of the related beating note and the stability of the resulting waveform is characterized via the use of artificially induced thermal cross-talk stimuli.
基金Engineering and Physical Sciences Research Council(EP/R003076/1,EP/T007303/1,EP/W024772/1)Ministero dell’Universitàe della Ricerca(PRIN(2022H7RR4F)).
文摘Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/L00044X/1)
文摘Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiberto-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories:in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth(in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing.Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits.
基金supported by the Engineering and Physical Sciences Research Council(EPSRC)UK through the Silicon Photonics for Future Systems(SPFS)Programme(EP/L00044X/1)the Photonic Phase Conjugation Systems(PHOS)(EP/S003436/1)
文摘An out-of-plane silicon grating coupler capable of mode-order conversion at the chip–fiber interface is designed and fabricated. Optimization of the structure is performed through finite-difference time-domain simulations,and the final device is characterized through far-field profile and transmission measurements. A coupling loss of 3.1 dB to a commercial two-mode fiber is measured for a single TE0→ LP11 mode conversion grating, which includes a conversion penalty of 1.3 dB. Far-field patterns of the excited LP11 mode profile are also reported.
基金Engineering and Physical Sciences Research Council (EP/T007303/1)Agencia Estatal de Investigación and NextGenerationEU/PRTR (FJC2020-042823-I)。
文摘We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.
