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First-Principle Studies on Adsorption of Cu^+ and Hydrated Cu^+ Cations on Clean Si(111) Surface
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作者 cheng feng-ming SHENG Yong-li +3 位作者 LI Meng-hua LIU Yong-jun YU Zhang-yu LIU cheng-bu 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2010年第3期472-478,共7页
To study the adsorption behavior of Cu^+ in aqueous solution on semiconductor surface, the interactions of Cu^+ and hydrated Cu^+ cations with the clean Si(111) surface were investigated via hybrid density functi... To study the adsorption behavior of Cu^+ in aqueous solution on semiconductor surface, the interactions of Cu^+ and hydrated Cu^+ cations with the clean Si(111) surface were investigated via hybrid density functional theory(B3LYP) and Moller-Plesset second-order perturbation(MP2) method. The clean Si(111) surface was described with cluster models(Si14H17, Si16H20 and Si22H21) and a four-silicon layer slab under periodic boundary conditions. Calculation results indicate that the bonding nature of adsorption of Cu^+ on Si surface can be viewed as partial covalent as well as ionic bonding. The binding energies between hydrated Cu^+ cations and Si(111) surface are large, suggesting a strong interaction between them. The coordination number of Cu^+(H2O)n on Si(111) surface was found to be 4. As the number of water molecules is larger than 5, water molecules form a hydrogen bond network. In aqueous solution, Cu^+ cations will safely attach to the clean Si(111) surface. 展开更多
关键词 Silicon surface Copper Ion-solid interaction ADSORPTION Density functional calculation
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