以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结...以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结构的一体化协同仿真技术.针对这一需求,本文提出基于时域不连续伽辽金技术的GaN基高功率微波器件高效场路协同仿真方法,将所提取的GaN HEMT(high electron mobility transistor)器件大信号紧凑模型引入电磁场方程中,采用局部时间步进技术以消除非线性紧凑模型及多尺度网格对全局算法稳定性条件的限制,实现有源器件-无源电磁结构、多尺度粗细网格的高效自适应求解.通过数值仿真算例与实验测试及软件计算结果对比展示了本文所提方法准确性和高效性,可为先进大功率微波器件的高可靠研发提供理论基础与设计参考.展开更多
With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering th...With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.展开更多
文摘以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结构的一体化协同仿真技术.针对这一需求,本文提出基于时域不连续伽辽金技术的GaN基高功率微波器件高效场路协同仿真方法,将所提取的GaN HEMT(high electron mobility transistor)器件大信号紧凑模型引入电磁场方程中,采用局部时间步进技术以消除非线性紧凑模型及多尺度网格对全局算法稳定性条件的限制,实现有源器件-无源电磁结构、多尺度粗细网格的高效自适应求解.通过数值仿真算例与实验测试及软件计算结果对比展示了本文所提方法准确性和高效性,可为先进大功率微波器件的高可靠研发提供理论基础与设计参考.
基金Supported by the National Key R&D Program of China(2022YFF0707800,2022YFF0707801)Primary Research&Development Plan of Jiangsu Province(BE2022070,BE2022070-2)。
文摘With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.
