Phase homogeneity and crystal structure of SbsaTe12 alloy synthesized by melt-quench method have been analyzed using X-ray diffraction （XRD） and Raman spectroscopy. Rietveld refinement of crystal structure of Sb8sTe...Phase homogeneity and crystal structure of SbsaTe12 alloy synthesized by melt-quench method have been analyzed using X-ray diffraction （XRD） and Raman spectroscopy. Rietveld refinement of crystal structure of Sb8sTe12 has revealed the formation of SbsTe3 and Sb phases respectively with 11R and A7 structures （space group is R3m）. Phase fractions of the phases SbsTe3 and Sb have been determined to be 44.44% and 55.56% respectively. Raman spectrum of SbssTe12 has showed a highest intensity peak at 156 cm-1 and another peak at 151.1 cm-1, which correspond to Alg modes of SbsTe3 and element Sb, respectively. Analysis of Raman spectrum has substantiated the results obtained from structure refinement regarding the presence of two different phases.展开更多
Bismuth ferrite（Bi_2Fe_4O_9） thin films were grown on p-type Si（100） substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscop...Bismuth ferrite（Bi_2Fe_4O_9） thin films were grown on p-type Si（100） substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase（56–130 nm） with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker＇s hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi_2Fe_4O_9 thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.展开更多
文摘Phase homogeneity and crystal structure of SbsaTe12 alloy synthesized by melt-quench method have been analyzed using X-ray diffraction （XRD） and Raman spectroscopy. Rietveld refinement of crystal structure of Sb8sTe12 has revealed the formation of SbsTe3 and Sb phases respectively with 11R and A7 structures （space group is R3m）. Phase fractions of the phases SbsTe3 and Sb have been determined to be 44.44% and 55.56% respectively. Raman spectrum of SbssTe12 has showed a highest intensity peak at 156 cm-1 and another peak at 151.1 cm-1, which correspond to Alg modes of SbsTe3 and element Sb, respectively. Analysis of Raman spectrum has substantiated the results obtained from structure refinement regarding the presence of two different phases.
文摘Bismuth ferrite（Bi_2Fe_4O_9） thin films were grown on p-type Si（100） substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase（56–130 nm） with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker＇s hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi_2Fe_4O_9 thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.
