We present a new charge trapping memory(CTM) device with the Au/Ga2O3/SiO2/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmissi...We present a new charge trapping memory(CTM) device with the Au/Ga2O3/SiO2/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO2 tunneling layer can be controlled by the annealing temperature.When the devices are annealed at 760℃, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674050 and 61874158)the Top-notch Youth Project in Hebei Province,China(Grant No.BJ2014008)+9 种基金the Outstanding Youth Project of Hebei Province,China(Grant No.F2016201220)the Outstanding Youth Cultivation Project of Hebei University,China(Grant No.2015JQY01)the Project of Science and Technology Activities for Overseas Researcher,China(Grant No.CL201602)the Institute of Baoding Nanyang Research-New Material Technology Platform,China(Grant No.17H03)the Project of Distinguished Young of Hebei Province,China(Grant No.A2018201231)the Training Program of Innovation and Entrepreneurship for Undergraduates,China(Grant Nos.201710075013and 2017075)the Support Program for the Top Young Talents of Hebei Province,China(Grant No.70280011807)Training and Introduction of Highlevel Innovative Talents of Hebei University,China(Grant No.801260201300)Hundred Persons Plan of Hebei Province,China(Grant Nos.606999919001,606999919013,606999919014,and 801260201300)Innovation Funding Project of Hebei Province,China(Grant No.CXZZBS2019030)
文摘We present a new charge trapping memory(CTM) device with the Au/Ga2O3/SiO2/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO2 tunneling layer can be controlled by the annealing temperature.When the devices are annealed at 760℃, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.
