Oxide semiconductor SrTiO3 single crystals are exposed to a reducing atmosphere H2/N2 to induce the reduction of Ti4＋ to Ti3＋ and the release of oxygen from the lattice compensating the reduction of the Ti ions. In ...Oxide semiconductor SrTiO3 single crystals are exposed to a reducing atmosphere H2/N2 to induce the reduction of Ti4＋ to Ti3＋ and the release of oxygen from the lattice compensating the reduction of the Ti ions. In a reducing atmosphere H2/N2 the optical edge brings about a red shift. The infrared reflection spectra suggest that the （11） STO single crystal surface can be terminated by the domain of the SrO or TiO2 alternative layer during the reduction. The anisotropy and asymmetry of optical second-harmonic intensity explain a slight shrinkage. The dielectric constant reaches about 6000 and shows almost frequency dependence at all temperatures. With the increasing temperature, the dielectric constant increases rapidly. The high temperature region and low temperature region have activation energies of 0.89 and 1.04, respectively.展开更多
基金Supported by the Far East University Research Foundation under Grant No FEU2013SO3the Hansung University
文摘Oxide semiconductor SrTiO3 single crystals are exposed to a reducing atmosphere H2/N2 to induce the reduction of Ti4＋ to Ti3＋ and the release of oxygen from the lattice compensating the reduction of the Ti ions. In a reducing atmosphere H2/N2 the optical edge brings about a red shift. The infrared reflection spectra suggest that the （11） STO single crystal surface can be terminated by the domain of the SrO or TiO2 alternative layer during the reduction. The anisotropy and asymmetry of optical second-harmonic intensity explain a slight shrinkage. The dielectric constant reaches about 6000 and shows almost frequency dependence at all temperatures. With the increasing temperature, the dielectric constant increases rapidly. The high temperature region and low temperature region have activation energies of 0.89 and 1.04, respectively.
