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The Study of Relaxation Time in Test of 940 nm Semiconductor Laser
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作者 Jiachun Li Jianjun Li +5 位作者 Tao Liu bifeng cui Jun Deng Jun Han Linjie He Shengjie Lin 《Journal of Computer and Communications》 2013年第7期46-49,共4页
Conventional test of the peak wavelength of a laser used to be applied immediately after a device is injected current. However, the results can not be considered as an accurate description to temperature characteristi... Conventional test of the peak wavelength of a laser used to be applied immediately after a device is injected current. However, the results can not be considered as an accurate description to temperature characteristic. This passage puts forward a concept of relaxation time in wavelength texts, mainly based on the experiment of 940 nm strain quantum well laser, confirming that under constant current, wavelength will get through a process of rising, and then, reach the limit. This process brings the effect on spectral characteristics of a device which cannot be ignored and the accumulated heat in relaxation time will gradually impact the emission wavelength of the laser, even crest split to form bimodal phenomenon. 展开更多
关键词 SEMICONDUCTOR Laser TEST TEMPERATURE Characteristics RELAXATION Time
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The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers 被引量:1
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作者 Tianxiao Fang bifeng cui +1 位作者 Shuai Hao Yang Wang 《Journal of Semiconductors》 EI CAS CSCD 2018年第2期28-32,共5页
In order to design a single mode 980 nm vertical cavity surface emitting laser(VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temp... In order to design a single mode 980 nm vertical cavity surface emitting laser(VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. 展开更多
关键词 980 nm laser mesa sizes
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