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Study of photocurrent generation in InP nanowire-based p+-i-n+ photodetectors
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作者 Vishal Jain Ali Nowzari +8 位作者 Jesper Wallentin Magnus T. Borgstrom Maria E. Messing Damir Asoli Mariusz Graczyk bemd witzigmann Federico Capasso Lars Samuelson Hakan Pettersson 《Nano Research》 SCIE EI CAS CSCD 2014年第4期544-552,共9页
We report on electrical and optical properties of p+-i-n+ photodetectors/solar cells based on square millimeter arrays of InP nanowires (NWs) grown on InP substrates. The study includes a sample series where the p... We report on electrical and optical properties of p+-i-n+ photodetectors/solar cells based on square millimeter arrays of InP nanowires (NWs) grown on InP substrates. The study includes a sample series where the p+-segment length was varied between 0 and 250 nm, as well as solar cells with 9.3% efficiency with similar design. The electrical data for all devices display clear rectifying behavior with an ideality factor between 1.8 and 2.5 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p^-segment length. Without a p+-segment, photogenerated carriers funneled from the substrate into the NWs contribute strongly to the photocurrent. Adding a p+-segment decouples the substrate and shifts the depletion region, and collection of photogenerated carriers, to the NWs, in agreement with theoretical modeling. In optimized solar cells, clear spectral signatures of interband transitions in the zinc blende and wurtzite InP layers of the mixed-phase i-segments are observed. Complementary electroluminescence, transmission electron microscopy (TEM), as well as measurements of the dependence of the photocurrent on angle of incidence and polarization, support our interpretations. 展开更多
关键词 NANOPHOTONICS NANOWIRES infrared (IR) PHOTODETECTORS solar cells
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