The surge in data volume and algorithmic complexity necessitates the development of highly integrated,low-power,and high-performance electronic components.Conventional complementary metal-oxide-semiconductor(CMOS)inve...The surge in data volume and algorithmic complexity necessitates the development of highly integrated,low-power,and high-performance electronic components.Conventional complementary metal-oxide-semiconductor(CMOS)inverters,which rely solely on isotropic two-dimensional materials,encounter limitations due to their single voltage output,thereby impeding the miniaturization of integrated circuits.In this study,we introduce anisotropic CMOS inverters based on n-ReS_(2)and p-WSe_(2),which demonstrate distinct voltage transfer characteristics across various crystalline orientations.These inverters exhibit the lowest voltage gain along the a-axis of ReS_(2)flakes,whereas they possess the highest voltage gain and the lowest static power consumption along the b-axis.By optimizing the gate dielectric on substrates,the inverter achieves an enhanced voltage gain of 30.8 and an ultra-low power consumption of 5.4 pW along the b-axis direction,when fabricated on a 35 nm Al_(2)O_(3)substrate deposited via atomic layer deposition(ALD)method.Additionally,it captures a clear dynamic switching behavior at a supply voltage of 3 V under a 20 Hz square wave input signal.This study proposes a potential approach to circuit miniaturization by leveraging anisotropic two-dimensional materials for the integration of diverse voltage transfer characteristics within a single logic device,thereby achieving a combination of low power consumption and high-density integration.展开更多
基金supported by the National Natural Science Foundation of China(NSFC)(No.52372131).
文摘The surge in data volume and algorithmic complexity necessitates the development of highly integrated,low-power,and high-performance electronic components.Conventional complementary metal-oxide-semiconductor(CMOS)inverters,which rely solely on isotropic two-dimensional materials,encounter limitations due to their single voltage output,thereby impeding the miniaturization of integrated circuits.In this study,we introduce anisotropic CMOS inverters based on n-ReS_(2)and p-WSe_(2),which demonstrate distinct voltage transfer characteristics across various crystalline orientations.These inverters exhibit the lowest voltage gain along the a-axis of ReS_(2)flakes,whereas they possess the highest voltage gain and the lowest static power consumption along the b-axis.By optimizing the gate dielectric on substrates,the inverter achieves an enhanced voltage gain of 30.8 and an ultra-low power consumption of 5.4 pW along the b-axis direction,when fabricated on a 35 nm Al_(2)O_(3)substrate deposited via atomic layer deposition(ALD)method.Additionally,it captures a clear dynamic switching behavior at a supply voltage of 3 V under a 20 Hz square wave input signal.This study proposes a potential approach to circuit miniaturization by leveraging anisotropic two-dimensional materials for the integration of diverse voltage transfer characteristics within a single logic device,thereby achieving a combination of low power consumption and high-density integration.
