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Structural engineering of vertically aligned nanocomposite films fabricated via magnetron and pulsed laser co-deposition for microwave application
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作者 Changliang Li Yong Sun +5 位作者 Xiuhong Dai Yinglong Wang Taifu Feng Jianxin Guo baoting liu Xiaobing Yan 《Journal of Materials Science & Technology》 CSCD 2024年第30期94-101,共8页
Microwaves are often used in communication engineering,including in microwave relays as well as mul-tichannel,mobile,and satellite communications.To meet the demand for a“small,light,thin,and precise”modern electron... Microwaves are often used in communication engineering,including in microwave relays as well as mul-tichannel,mobile,and satellite communications.To meet the demand for a“small,light,thin,and precise”modern electronic machine,developing highly tunable microwave materials to manufacture miniaturized microwave devices has become a top priority.Ferroelectric materials are excellent microwave materi-als,showing outstanding dielectric properties and tunability.Introducing low dielectric loss oxides in the construction of vertical self-assembly nanocomposites(VSNs)effectively improves their tunability and reduces dielectric loss.However,the optimal doping content of simple VSN films limits further improve-ment of tunability.Herein,we propose a strategy-gradient VSN to achieve combined improvement in tunability and dielectric constant by designing a sputtering and pulsed laser co-deposition.The resulting VSN composite film has a dielectric constant of 428.08,a dielectric loss of 0.0212,and a tunability of 78.69%.Our results contribute to the development of filters and have broad application prospects in the microwave industry. 展开更多
关键词 1–3-type composite film Heteroepitaxial nanocomposite film DIELECTRIC
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AgNbO_(3) antiferroelectric film with high energy storage performance 被引量:3
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作者 Yanle Zhang Xiaobo Li +6 位作者 Jianmin Song Suwei Zhang Jing Wang Xiuhong Dai baoting liu Guoyi Dong Lei Zhao 《Journal of Materiomics》 SCIE EI 2021年第6期1294-1300,共7页
Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications,which are becoming increasingly important for power electronics nowadays.Among them,AgNbO_(3) based lead-free cer... Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications,which are becoming increasingly important for power electronics nowadays.Among them,AgNbO_(3) based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates.However,most of the AgNbO_(3) based ceramics suffers from low dielectric breakdown strength(Eb).The limitation of low Eb is broken to some extent in this work.Here,AgNbO_(3) epitaxial films were fabricated by pulsed laser deposition,which possess high Eb of 624 kV/cm.The(001)AgNbO_(3) epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm.A recoverable energy density of 5.8 J/cm^(3) and an energy efficiency of 55.8%are obtained at 600 kV/cm,which demonstrates the great promise of the AgNbO_(3) film for energy storage applications. 展开更多
关键词 AgNbO_(3) ANTIFERROELECTRIC FILM Energy storage performance
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