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Process-structure-property relationship for plasma-sprayed iron-based amorphous/crystalline composite coatings 被引量:1
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作者 Abhishek Pathak Biswajyoti Mukherjee +5 位作者 Krishna Kant Pandey Aminul Islam Pavan Bijalwan Monojit Dutta atanu banerjee Anup Kumar Keshri 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2022年第1期144-152,共9页
This study explores the fabrication of Fe-based amorphous/crystalline coating by air plasma spraying and its dependency on the coating parameters(plasma power,primary gas flow rate,powder feed rate,and stand-off dista... This study explores the fabrication of Fe-based amorphous/crystalline coating by air plasma spraying and its dependency on the coating parameters(plasma power,primary gas flow rate,powder feed rate,and stand-off distance).X-ray diffraction of the coatings deposited at optimized spray parameters showed the presence of amorphous/crystalline phase.Coatings deposited at a lower plasma power and highest gas flow rate exhibited better density,hardness,and wear resistance.All coatings demonstrated equally good resistance against the corrosive environment(3.5wt%NaCl solution).Mechanical,wear,and tribological studies indicated that a single process parameter optimization cannot provide good coating performance;instead,all process parameters have a unique role in defining better properties for the coating by con-trolling the in-flight particle temperature and velocity profile,followed by the cooling pattern of molten droplet before impingement on the substrate. 展开更多
关键词 Fe-based alloys amorphous alloys plasma spray coating mechanical corrosion and wear
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Effect of optical illumination on DDR IMPATT diode at 36 GHz
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作者 atanu banerjee M.Mitra 《Journal of Semiconductors》 EI CAS CSCD 2017年第11期48-54,共7页
A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, G... A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted(TM) and flip chip(FC) configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode. 展开更多
关键词 optical modulation flip chip structure top mounted structure window frequency DDR IMPATT diode
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