The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements ...The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements and notable leaps in performance.The performance of silicon on insulator(SOI)based photonic devices,such as fast silicon optical modulators,photonic transceivers,optical filters,etc.,have been discussed.This would be a step forward in creating standalone silicon photonic devices,strengthening the possibility of single on-chip nanophotonic integrated circuits.Suppose an integrated silicon photonic chip is designed and fabricated.In that case,it might drastically modify these combined photonic component costs,power consumption,and size,bringing substantial,perhaps revolutionary,changes to the next-generation communications sector.Yet,the monolithic integration of photonic and electrical circuitry is a significant technological difficulty.A complicated set of factors must be carefully considered to determine which application will have the best chance of success employing silicon-based integrated product solutions.The processing limitations connected to the current process flow,the process generation(sometimes referred to as lithography node generation),and packaging requirements are a few of these factors to consider.This review highlights recent developments in integrated silicon photonic devices and their proven applications,including but not limited to photonic waveguides,photonic amplifiers and filters,onchip photonic transceivers,and the state-of-the-art of silicon photonic in multidimensional quantum systems.The investigated devices aim to expedite the transfer of silicon photonics from academia to industry by opening the next phase in on-chip silicon photonics and enabling the application of silicon photonic-based devices in various optical systems.展开更多
With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2...With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.展开更多
An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horiz...An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.展开更多
In this study, austenitic stainless steel(ASS) was additively fabricated by an arc-based direct energy deposition(DED) technique. Macrostructure, microstructure, mechanical characteristics at different spatial orienta...In this study, austenitic stainless steel(ASS) was additively fabricated by an arc-based direct energy deposition(DED) technique. Macrostructure, microstructure, mechanical characteristics at different spatial orientations(0°, 90°, and 45°), and wear characteristics were evaluated at the deposited structure top, middle, and bottom regions. Results show that austenite(γ) and delta-ferrite(δ) phases make up most of the microstructure of additively fabricated SS316LSi steel. Within γ matrix, δ phase is dispersed both(within and along) grain boundaries, exhibiting a fine vermicular morphology. The bottom, middle,and top regions of WAAM deposited ASS exhibit similar values to those of wrought SS316L in the tensile and impact test findings. Notably, a drop in hardness values is observed as build height increases. During SEM examinations of fractured surfaces from tensile specimen, closed dimples were observed, indicating good ductility of as-built structure. Wear test findings show signs of mild oxidation and usual adhesive wear. By depositing a mechanically mixed composite layer, an increase in the oxidation percentage was discovered to facilitate healing of worn surfaces. The findings of this study will help in design, production and renovation of products/components that are prone to wear. WAAM-deposited ASS has remarkable strength and ability to withstand impacts;it can be used in the production of armour plates for defence applications, mainly military vehicles and aircraft.展开更多
Ten quantitative morphological characters were studied in 56 Morus alba L. trees representing three natural populations from the trans-Himalayan Ladakh region. The altitude of collection sites ranged from 2815 to 3177...Ten quantitative morphological characters were studied in 56 Morus alba L. trees representing three natural populations from the trans-Himalayan Ladakh region. The altitude of collection sites ranged from 2815 to 3177 m above the sea level(asl). Coefficient of variation(CV) showed high phenotypic variation in M. alba. Linear regression analysis revealed that leaf and fruit size decreases with an increase in altitude. High CV was observed for leaf length, leaf width, petiole length, leaf area, internodal distance, number of nodes, bud length, fruit length, fruit width and fruit weight. Similarly, a high phenotypic plasticity index was observed for bud length, leaf length, leaf width, petiole length, leaf area, inter-nodal distance, number of nodes, fruit length, fruit width and fruit weight. For every 100 m increase in altitude, leaf length, leaf width and leaf area decreased by 1 cm, 0.8 cm and 16.6 cm2, respectively. Analysis of covariance showed a predominant altitudinal effect on the morphological characters in comparison to the population effect. A small change in the altitude caused significant change in the plant morphological characteristics. The present investigation represents to our knowledge the first study addressing phenotypic variation in mulberryalong an altitudinal gradient.展开更多
文摘The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements and notable leaps in performance.The performance of silicon on insulator(SOI)based photonic devices,such as fast silicon optical modulators,photonic transceivers,optical filters,etc.,have been discussed.This would be a step forward in creating standalone silicon photonic devices,strengthening the possibility of single on-chip nanophotonic integrated circuits.Suppose an integrated silicon photonic chip is designed and fabricated.In that case,it might drastically modify these combined photonic component costs,power consumption,and size,bringing substantial,perhaps revolutionary,changes to the next-generation communications sector.Yet,the monolithic integration of photonic and electrical circuitry is a significant technological difficulty.A complicated set of factors must be carefully considered to determine which application will have the best chance of success employing silicon-based integrated product solutions.The processing limitations connected to the current process flow,the process generation(sometimes referred to as lithography node generation),and packaging requirements are a few of these factors to consider.This review highlights recent developments in integrated silicon photonic devices and their proven applications,including but not limited to photonic waveguides,photonic amplifiers and filters,onchip photonic transceivers,and the state-of-the-art of silicon photonic in multidimensional quantum systems.The investigated devices aim to expedite the transfer of silicon photonics from academia to industry by opening the next phase in on-chip silicon photonics and enabling the application of silicon photonic-based devices in various optical systems.
文摘With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.
基金CSIR-09/0973(11599)/2021-EMR-I and SERB(Project no:CRG/2021/000255),Department of Science and Technology,Govt.of India。
文摘An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.
基金Science&Engineering Research Board(SERB),DST,for its financial assistance received from the project(vide sanction order no.SPG/2021/003383)。
文摘In this study, austenitic stainless steel(ASS) was additively fabricated by an arc-based direct energy deposition(DED) technique. Macrostructure, microstructure, mechanical characteristics at different spatial orientations(0°, 90°, and 45°), and wear characteristics were evaluated at the deposited structure top, middle, and bottom regions. Results show that austenite(γ) and delta-ferrite(δ) phases make up most of the microstructure of additively fabricated SS316LSi steel. Within γ matrix, δ phase is dispersed both(within and along) grain boundaries, exhibiting a fine vermicular morphology. The bottom, middle,and top regions of WAAM deposited ASS exhibit similar values to those of wrought SS316L in the tensile and impact test findings. Notably, a drop in hardness values is observed as build height increases. During SEM examinations of fractured surfaces from tensile specimen, closed dimples were observed, indicating good ductility of as-built structure. Wear test findings show signs of mild oxidation and usual adhesive wear. By depositing a mechanically mixed composite layer, an increase in the oxidation percentage was discovered to facilitate healing of worn surfaces. The findings of this study will help in design, production and renovation of products/components that are prone to wear. WAAM-deposited ASS has remarkable strength and ability to withstand impacts;it can be used in the production of armour plates for defence applications, mainly military vehicles and aircraft.
基金supported by Defence Research and Development Organization (DRDO),Ministry of Defence, Government of India
文摘Ten quantitative morphological characters were studied in 56 Morus alba L. trees representing three natural populations from the trans-Himalayan Ladakh region. The altitude of collection sites ranged from 2815 to 3177 m above the sea level(asl). Coefficient of variation(CV) showed high phenotypic variation in M. alba. Linear regression analysis revealed that leaf and fruit size decreases with an increase in altitude. High CV was observed for leaf length, leaf width, petiole length, leaf area, internodal distance, number of nodes, bud length, fruit length, fruit width and fruit weight. Similarly, a high phenotypic plasticity index was observed for bud length, leaf length, leaf width, petiole length, leaf area, inter-nodal distance, number of nodes, fruit length, fruit width and fruit weight. For every 100 m increase in altitude, leaf length, leaf width and leaf area decreased by 1 cm, 0.8 cm and 16.6 cm2, respectively. Analysis of covariance showed a predominant altitudinal effect on the morphological characters in comparison to the population effect. A small change in the altitude caused significant change in the plant morphological characteristics. The present investigation represents to our knowledge the first study addressing phenotypic variation in mulberryalong an altitudinal gradient.
