Lithium metal anodes,with a theoretical capacity of up to 3860 mAh·g−1,are regarded as the cornerstone for developing next-generation high-energy-density batteries.However,several key challenges hinder their prac...Lithium metal anodes,with a theoretical capacity of up to 3860 mAh·g−1,are regarded as the cornerstone for developing next-generation high-energy-density batteries.However,several key challenges hinder their practical applications,includ-ing dendrite formation,unstable solid electrolyte interphase(SEI),side reactions with electrolytes,and associated safety risks.This review systematically explores the mechanisms of lithium nucleation,growth,and stripping in both liquid and solid-state battery systems,analyzing critical theoretical concepts like heterogeneous nucleation thermodynamics,surface diffusion kinetics,space charge effects,and SEI-induced nucleation,which are crucial for understanding the genesis of dendrite growth.Additionally,the review discusses the electrochemical-mechanical coupling failures that lead to SEI degra-dation and the formation of dead lithium.For liquid systems,the review proposes strategies to mitigate dendrite formation and SEI instability,which include electrolyte optimization,artificial SEI design,and electrode framework design.In solid-state batteries,the review offers a granular analysis of the interface challenges associated with polymer,sulfide,and halide electrolytes and summarizes different solutions for different solid-state electrolytes.Meanwhile,the review emphasizes the importance of advanced characterization techniques and computational modeling in understanding and regulating the interface between lithium metal and electrolytes.Looking ahead,the review highlights future research directions that emp-hasize the integration of cross-disciplinary approaches to tackle these interconnected challenges.By addressing these issues,the path will be clear for the rapid commercialization and widespread application of lithium metal batteries,bringing us closer to realizing stable,high-energy-density batteries that can satisfy the escalating demands of modern energy storage applications across various industries.展开更多
In recent years,physical unclonable function(PUF)has emerged as a lightweight solution in the Internet of Things security.However,conventional PUFs based on complementary metal oxide semiconductor(CMOS)present challen...In recent years,physical unclonable function(PUF)has emerged as a lightweight solution in the Internet of Things security.However,conventional PUFs based on complementary metal oxide semiconductor(CMOS)present challenges such as insufficient randomness,significant power and area overhead,and vulnerability to environmental factors,leading to reduced reliability.In this study,we realize a strong,highly reliable and reconfigurable PUF with resistance against machine-learning attacks in a 1 kb spinorbit torque magnetic random access memory fabricated using a 180 nm CMOS process.This strong PUF achieves a challenge-response pair capacity of 10^(9) through a computing-in-memory approach.The results demonstrate that the proposed PUF exhibits near-ideal performance metrics:50.07% uniformity,50% diffuseness,49.89% uniqueness,and a bit error rate of 0%,even in a 375 K environment.The reconfigurability of PUF is demonstrated by a reconfigurable Hamming distance of 49.31% and a correlation coefficient of less than 0.2,making it difficult to extract output keys through side-channel analysis.Furthermore,resistance to machine-learning modeling attacks is confirmed by achieving an ideal accuracy prediction of approximately 50% in the test set.展开更多
Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The ma...Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.展开更多
Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magne...Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magnetic storage.However, reversed magnetic domains come into being with the increasing layer repetition ‘N’ to reduce magneto-static energy, resulting in the remarkable diminishment of the remanent magnetization(Mr). As a result, the product of Mrand thickness(i.e., the remanent moment-thickness product, Mrt), a key parameter in magnetic recording for reliable data storing and reading, also decreases dramatically. To overcome this issue, we deposit an ultra-thick granular [Co/Pt]80multilayer with a total thickness of 68 nm on granular SiNxbuffer layer. The Mrt value, Mrto saturation magnetization(Ms) ratio as well as out of plane(OOP) coercivity(Hcoop) are high up to 2.97 memu/cm^(2), 67%, and 1940 Oe(1 Oe = 79.5775 A·m^(-1)),respectively, which is remarkably improved compared with that of continuous [Co/Pt]80multilayers. That is because large amounts of grain boundaries in the granular multilayers can efficiently impede the propagation and expansion of reversed magnetic domains, which is verified by experimental investigations and micromagnetic simulation results. The simulation results also indicate that the value of Mrt, Mr/Msratio, and Hcoopcan be further improved through optimizing the granule size, which can be experimentally realized by manipulating the process parameter of SiNxbuffer layer. This work provides an alternative solution for achieving high Mrt value in ultra-thick Co/Pt multilayers, which is of unneglectable potential in applications of high-density magnetic recording.展开更多
Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last...Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in Co Fe B/Mg O-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions,which are stabilized under the cooperation of interfacial Dzyaloshinskii–Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize highdensity memory and neuromorphic computing.展开更多
Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very useful.After tough challenges,the applications of AFMs in electronic devices have...Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very useful.After tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs.As AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of research.In this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations perspective.We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of AFMs.Finally,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.展开更多
The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the fi...The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the switching.Furthermore, the origin of incubation time in SOT induced switching is clarified simultaneously.展开更多
Magnetic droplets,a class of highly nonlinear magnetodynamic solitons,can be nucleated and stabilized in nanocontact spintorque nano-oscillators.Here we experimentally demonstrate magnetic droplets in magnetic tunnel ...Magnetic droplets,a class of highly nonlinear magnetodynamic solitons,can be nucleated and stabilized in nanocontact spintorque nano-oscillators.Here we experimentally demonstrate magnetic droplets in magnetic tunnel junctions(MTJs).The droplet nucleation is accompanied by power enhancement compared with its ferromagnetic resonance modes.The nucleation and stabilization of droplets are ascribed to the double-Co Fe B free-layer structure in the all-perpendicular MTJ,which provides a low Zhang-Li torque and a high pinning field.Our results enable better electrical sensitivity in fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications and materials science.展开更多
基金supported by grants from the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB1040100 and XDB1040300)the National Natural Science Foundation of China(Grant Nos.22379108,52202279,52225105,22279127,22425403,92372125,22421001,22205241,22425403,92372125,22421001,22205241,92472207,52472223,52102280,22393900 and 22209010)+1 种基金the National Key Research and Development Program of China(Grant Nos.2021YFF0500600 and 2021YFB2500300)the Fundamental Research Funds for the Central Univer-sities(Grant No.WK9990000170)。
文摘Lithium metal anodes,with a theoretical capacity of up to 3860 mAh·g−1,are regarded as the cornerstone for developing next-generation high-energy-density batteries.However,several key challenges hinder their practical applications,includ-ing dendrite formation,unstable solid electrolyte interphase(SEI),side reactions with electrolytes,and associated safety risks.This review systematically explores the mechanisms of lithium nucleation,growth,and stripping in both liquid and solid-state battery systems,analyzing critical theoretical concepts like heterogeneous nucleation thermodynamics,surface diffusion kinetics,space charge effects,and SEI-induced nucleation,which are crucial for understanding the genesis of dendrite growth.Additionally,the review discusses the electrochemical-mechanical coupling failures that lead to SEI degra-dation and the formation of dead lithium.For liquid systems,the review proposes strategies to mitigate dendrite formation and SEI instability,which include electrolyte optimization,artificial SEI design,and electrode framework design.In solid-state batteries,the review offers a granular analysis of the interface challenges associated with polymer,sulfide,and halide electrolytes and summarizes different solutions for different solid-state electrolytes.Meanwhile,the review emphasizes the importance of advanced characterization techniques and computational modeling in understanding and regulating the interface between lithium metal and electrolytes.Looking ahead,the review highlights future research directions that emp-hasize the integration of cross-disciplinary approaches to tackle these interconnected challenges.By addressing these issues,the path will be clear for the rapid commercialization and widespread application of lithium metal batteries,bringing us closer to realizing stable,high-energy-density batteries that can satisfy the escalating demands of modern energy storage applications across various industries.
基金supported by the National Natural Science Foundation of China(92164206,52261145694,T2394474,T2394470,623B2015,62271026,62401026,and 62404013)the National Key Research and Development Program of China(2022YFB4400200)+1 种基金the New Cornerstone Science Foundation through the XPLORER PRIZE,the National Postdoctoral Program for Innovative Talents(BX20220374 and BX20240455)the China Postdoctoral Science Foundation Funded Project(2023M740177 and 2022M720345).
文摘In recent years,physical unclonable function(PUF)has emerged as a lightweight solution in the Internet of Things security.However,conventional PUFs based on complementary metal oxide semiconductor(CMOS)present challenges such as insufficient randomness,significant power and area overhead,and vulnerability to environmental factors,leading to reduced reliability.In this study,we realize a strong,highly reliable and reconfigurable PUF with resistance against machine-learning attacks in a 1 kb spinorbit torque magnetic random access memory fabricated using a 180 nm CMOS process.This strong PUF achieves a challenge-response pair capacity of 10^(9) through a computing-in-memory approach.The results demonstrate that the proposed PUF exhibits near-ideal performance metrics:50.07% uniformity,50% diffuseness,49.89% uniqueness,and a bit error rate of 0%,even in a 375 K environment.The reconfigurability of PUF is demonstrated by a reconfigurable Hamming distance of 49.31% and a correlation coefficient of less than 0.2,making it difficult to extract output keys through side-channel analysis.Furthermore,resistance to machine-learning modeling attacks is confirmed by achieving an ideal accuracy prediction of approximately 50% in the test set.
基金the Tencent Foundation through the XPLORER PRIZEthe National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303)the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。
文摘Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.
基金supported by the National Natural Science Foundation of China (Grant No. 51901008)the National Key Research and Development Program of China (Grant No. 2021YFB3201800)。
文摘Thanks to the strong perpendicular magnetic anisotropy(PMA), excellent processing compatibility as well as novel spintronic phenomenon, Co/Pt multilayers have been attracting massive attention and widely used in magnetic storage.However, reversed magnetic domains come into being with the increasing layer repetition ‘N’ to reduce magneto-static energy, resulting in the remarkable diminishment of the remanent magnetization(Mr). As a result, the product of Mrand thickness(i.e., the remanent moment-thickness product, Mrt), a key parameter in magnetic recording for reliable data storing and reading, also decreases dramatically. To overcome this issue, we deposit an ultra-thick granular [Co/Pt]80multilayer with a total thickness of 68 nm on granular SiNxbuffer layer. The Mrt value, Mrto saturation magnetization(Ms) ratio as well as out of plane(OOP) coercivity(Hcoop) are high up to 2.97 memu/cm^(2), 67%, and 1940 Oe(1 Oe = 79.5775 A·m^(-1)),respectively, which is remarkably improved compared with that of continuous [Co/Pt]80multilayers. That is because large amounts of grain boundaries in the granular multilayers can efficiently impede the propagation and expansion of reversed magnetic domains, which is verified by experimental investigations and micromagnetic simulation results. The simulation results also indicate that the value of Mrt, Mr/Msratio, and Hcoopcan be further improved through optimizing the granule size, which can be experimentally realized by manipulating the process parameter of SiNxbuffer layer. This work provides an alternative solution for achieving high Mrt value in ultra-thick Co/Pt multilayers, which is of unneglectable potential in applications of high-density magnetic recording.
基金financial support from the National Key R&D Program of China(2018YFB0407602,and 2020YFA0309300)National Natural Science Foundation of China(61627813,61871008,62001019,12004024,and 51901081)+5 种基金Beijing Natural Science Foundation(4202043)Beijing Nova Program from Beijing Municipal Science and Technology Commission(Z201100006820042)National Natural Science Foundation of China-German Research Foundation(52061135105)Outstanding Research Project of Shen Yuan Honors College,BUAA(230121102)the Science and Technology Program of Guangzhou(202002030052)Joint Research Key Fund for Guangzhou and Shen Zhen(2021B1515120047)。
文摘Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in Co Fe B/Mg O-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions,which are stabilized under the cooperation of interfacial Dzyaloshinskii–Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize highdensity memory and neuromorphic computing.
基金the National Key Research and Development Program of China(Grants No.2021YFB3601303,2021YFB3601300)the National Natural Science Foundation of China(Grants No.92164206,61904009,62001014 and 61627813)for their financial support of this work.
文摘Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very useful.After tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs.As AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of research.In this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations perspective.We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of AFMs.Finally,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.
基金supported by the National Key Research and Development Program of China (Grant Nos. 2021YFB3601303, and 2021YFB3601300)the National Natural Science Foundation of China (Grant Nos. 92164206, 61904009, and 62001014) for their financial support of this work。
文摘The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the switching.Furthermore, the origin of incubation time in SOT induced switching is clarified simultaneously.
基金supported by the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)the National Natural Science Foundation of China(Grant Nos.61627813,61904009)the China Postdoctoral Science Foundation Funded Project(Grant No.2018M641151)。
文摘Magnetic droplets,a class of highly nonlinear magnetodynamic solitons,can be nucleated and stabilized in nanocontact spintorque nano-oscillators.Here we experimentally demonstrate magnetic droplets in magnetic tunnel junctions(MTJs).The droplet nucleation is accompanied by power enhancement compared with its ferromagnetic resonance modes.The nucleation and stabilization of droplets are ascribed to the double-Co Fe B free-layer structure in the all-perpendicular MTJ,which provides a low Zhang-Li torque and a high pinning field.Our results enable better electrical sensitivity in fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications and materials science.
