n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction （SHJ） solar cells wh...n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction （SHJ） solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of〉 22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope （SEM） and transmission electron microscope （TEM）. Furthermore, the dependence of SHJ solar cell open- circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 μm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 μm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.展开更多
With the gradual progression of the carbon neutrality target,the future of our electricity supply will experience a massive increase in solar generation,and approximately 50%of the global electricity generation will c...With the gradual progression of the carbon neutrality target,the future of our electricity supply will experience a massive increase in solar generation,and approximately 50%of the global electricity generation will come from solar generation by 2050.This provides the opportunity for researchers to diversify the applications of photovoltaics(PVs)and integrate for daily use in the future.Flexible solar cell technology is the next frontier in solar PV and is the key way to achieve CO_(2)neutrality.The integration of PV technology with other fields will greatly broaden the development areas for the PV industry,providing products with higher added value.In this paper,we reviewed the latest research progress on flexible solar cells(perovskite solar cells,organic solar cells,and flexible silicon solar cells),and proposed the future applications of flexible solar cell technology.展开更多
Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalli...Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalline silicon.Herein,to overcome the poor hole selectivity of stoichiometric NiO_(x) due to its low carrier concentration and conductivity,silver-doped nickel oxide(NiO_(x):Ag)hole transport layers with high carrier concentrations were prepared by co-sputtering high-purity silver sheets and pure NiO_(x) targets.The improved electrical conductivity of NiO_(x) was attributed to the holes generated by the Ag^(+)substituents for Ni^(2+),and moreover,the introduction of Ag^(+)also increased the amount of Ni^(3+)present,both of which increased the carrier concentration in NiO_(x).Ag^(+)doping also reduced the c-Si/NiO_(x) contact resistivity and improved the hole-selective contact with NiO_(x).Furthermore,the problems of particle clusters and interfacial defects on the surfaces of NiO_(x):Ag films were solved by UV-ozone oxidation and high-temperature annealing,which facilitated separation and transport of carriers at the c-Si/NiO_(x) interface.The constructed c-Si/NiO_(x):Ag solar cell exhibited an increase in open-circuit voltage from 490 to 596 mV and achieved a conversion efficiency of 14.4%.展开更多
文摘n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction （SHJ） solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of〉 22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope （SEM） and transmission electron microscope （TEM）. Furthermore, the dependence of SHJ solar cell open- circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 μm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 μm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.
基金supported by the National Natural Science Foundation of China(T2322028,62105129,and 62004208)Sichuan Science and Technology Program(2023ZYD0163)+2 种基金the Science and Technology Commission of Shanghai Municipality(22ZR1473200)the Rising-Star Program of the Shanghai 2023 Science and Technology Innovation Action Plan(23QA1411100)the Autonomous Deployment Project of State Key Laboratory of Materials for Integrated Circuits(NKLJC-Z2023ZD01)。
文摘With the gradual progression of the carbon neutrality target,the future of our electricity supply will experience a massive increase in solar generation,and approximately 50%of the global electricity generation will come from solar generation by 2050.This provides the opportunity for researchers to diversify the applications of photovoltaics(PVs)and integrate for daily use in the future.Flexible solar cell technology is the next frontier in solar PV and is the key way to achieve CO_(2)neutrality.The integration of PV technology with other fields will greatly broaden the development areas for the PV industry,providing products with higher added value.In this paper,we reviewed the latest research progress on flexible solar cells(perovskite solar cells,organic solar cells,and flexible silicon solar cells),and proposed the future applications of flexible solar cell technology.
基金supported by the National Natural Science Foundation of China(Grant No.61974076)the China National Key R&D Program(Grant No.2022YFC2807104).
文摘Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalline silicon.Herein,to overcome the poor hole selectivity of stoichiometric NiO_(x) due to its low carrier concentration and conductivity,silver-doped nickel oxide(NiO_(x):Ag)hole transport layers with high carrier concentrations were prepared by co-sputtering high-purity silver sheets and pure NiO_(x) targets.The improved electrical conductivity of NiO_(x) was attributed to the holes generated by the Ag^(+)substituents for Ni^(2+),and moreover,the introduction of Ag^(+)also increased the amount of Ni^(3+)present,both of which increased the carrier concentration in NiO_(x).Ag^(+)doping also reduced the c-Si/NiO_(x) contact resistivity and improved the hole-selective contact with NiO_(x).Furthermore,the problems of particle clusters and interfacial defects on the surfaces of NiO_(x):Ag films were solved by UV-ozone oxidation and high-temperature annealing,which facilitated separation and transport of carriers at the c-Si/NiO_(x) interface.The constructed c-Si/NiO_(x):Ag solar cell exhibited an increase in open-circuit voltage from 490 to 596 mV and achieved a conversion efficiency of 14.4%.
