Narrow linewidth stabilized lasers are central to precision applications that operate across the visible to short-wave infrared wavelengths,including optical clocks,quantum sensing and computing,ultra-low noise microw...Narrow linewidth stabilized lasers are central to precision applications that operate across the visible to short-wave infrared wavelengths,including optical clocks,quantum sensing and computing,ultra-low noise microwave generation,and fiber sensing.Today,these spectrally pure sources are realized using multiple external cavity tabletop lasers locked to bulk-optic free-space reference cavities.Integration of this technology will enable portable precision applications with improved reliability and robustness.Here,we report wavelength-flexible design and operation,over more than an octave span,of an integrated coil-resonator-stabilized Brillouin laser architecture.Leveraging a versatile two-stage noise reduction approach,we achieve low linewidths and high stability with chip-scale laser designs based on the ultra-low-loss,CMOS-compatible silicon nitride platform.We report operation at 674 and 698 nm for applications to strontium neutral and trapped-ion clocks,quantum sensing and computing,and at 1550 nm for applications to fiber sensing and ultra-low phase noise microwave generation.Over this range we demonstrate frequency noise reduction from 1 to 10 MHz resulting in 1.0-17 Hz fundamental and 181-630 Hz integral linewidths and an Allan deviation of 6.5×10^(-13)at 1ms for 674 nm,6.0×10^(-13)at 15ms for 698 nm,and 2.6×10^(-13)at 15 ms for 1550 nm.This work demonstrates the lowest fundamental and integral linewidths and highest stability achieved to date for stabilized Brillouin lasers with integrated coil-resonator references,with over an order of magnitude improvement in the visible wavelength range.These results unlock the potential of integrated,ultra-low-phase-noise stabilized lasers for precision applications and further integration in systems-on-chip solutions.展开更多
Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics,III–V compound semiconductors,lithium niobate,organ...Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics,III–V compound semiconductors,lithium niobate,organics,and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides.New techniques are needed to maintain the state-of-the-art losses,nonlinear properties,and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration.We report a significant advance in silicon nitride integrated photonics,demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250℃,with the same deuterated silane based fabrication flow,for nitride and oxide,for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing.We report record low anneal-free losses for both nitride core and oxide cladding,enabling 1.77 dBm^(-1) loss and 14.9 million Q for 80 nm nitride core waveguides,more than half an order magnitude lower loss than previously reported sub 300℃ process.For 800 nm-thick nitride,we achieve as good as 8.66 dBm^(-1) loss and 4.03 million Q,the highest reported Q for a low temperature processed resonator with equivalent device area,with a median of loss and Q of 13.9 dBm^(-1) and 2.59 million each respectively.We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity,and using a thick nitride micro-resonator we demonstrate OPO,over two octave supercontinuum generation,and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length.These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.展开更多
基金supported by DARPA GRYPHON,under Award Number HR0011-22-2-0008by the U.S.Army Research Office under contract/grant number W911NF2310179+1 种基金by the NSF under Award Number 2016244by a gift from Thorlabs.
文摘Narrow linewidth stabilized lasers are central to precision applications that operate across the visible to short-wave infrared wavelengths,including optical clocks,quantum sensing and computing,ultra-low noise microwave generation,and fiber sensing.Today,these spectrally pure sources are realized using multiple external cavity tabletop lasers locked to bulk-optic free-space reference cavities.Integration of this technology will enable portable precision applications with improved reliability and robustness.Here,we report wavelength-flexible design and operation,over more than an octave span,of an integrated coil-resonator-stabilized Brillouin laser architecture.Leveraging a versatile two-stage noise reduction approach,we achieve low linewidths and high stability with chip-scale laser designs based on the ultra-low-loss,CMOS-compatible silicon nitride platform.We report operation at 674 and 698 nm for applications to strontium neutral and trapped-ion clocks,quantum sensing and computing,and at 1550 nm for applications to fiber sensing and ultra-low phase noise microwave generation.Over this range we demonstrate frequency noise reduction from 1 to 10 MHz resulting in 1.0-17 Hz fundamental and 181-630 Hz integral linewidths and an Allan deviation of 6.5×10^(-13)at 1ms for 674 nm,6.0×10^(-13)at 15ms for 698 nm,and 2.6×10^(-13)at 15 ms for 1550 nm.This work demonstrates the lowest fundamental and integral linewidths and highest stability achieved to date for stabilized Brillouin lasers with integrated coil-resonator references,with over an order of magnitude improvement in the visible wavelength range.These results unlock the potential of integrated,ultra-low-phase-noise stabilized lasers for precision applications and further integration in systems-on-chip solutions.
基金supported by DARPA GRYPHON contract number HR0011-22-2-0008ARL Award W911NF-22-2-0056.
文摘Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics,III–V compound semiconductors,lithium niobate,organics,and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides.New techniques are needed to maintain the state-of-the-art losses,nonlinear properties,and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration.We report a significant advance in silicon nitride integrated photonics,demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250℃,with the same deuterated silane based fabrication flow,for nitride and oxide,for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing.We report record low anneal-free losses for both nitride core and oxide cladding,enabling 1.77 dBm^(-1) loss and 14.9 million Q for 80 nm nitride core waveguides,more than half an order magnitude lower loss than previously reported sub 300℃ process.For 800 nm-thick nitride,we achieve as good as 8.66 dBm^(-1) loss and 4.03 million Q,the highest reported Q for a low temperature processed resonator with equivalent device area,with a median of loss and Q of 13.9 dBm^(-1) and 2.59 million each respectively.We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity,and using a thick nitride micro-resonator we demonstrate OPO,over two octave supercontinuum generation,and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length.These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.
