GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of w...GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets.However,the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker.These differences can be explained as effects of the catalyst Ni seeds.展开更多
基金This work has been supported by the EU through the IST project NODE(No.015783)the Marie Curie RTN PARSEM(MRTN-CT-2004-005583).
文摘GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets.However,the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker.These differences can be explained as effects of the catalyst Ni seeds.
