We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integr...We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve theextraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunelyfabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extractionefficiency in such devices increases by a factor of 4 at a resonance wavelength.展开更多
We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatib...We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatible with Si technology.The structure allows for a high light-trapping efficiency across the entire visible range,attaining total reflectance values as low as 0.1%when the wavelength in the medium matches the length scale of maximum heterogeneity in the system.We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering,which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence.These strong emissions are correlated on all length scales according to the refractive index fluctuations.The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.展开更多
基金This work has been partially supported by MIUR through the proj- ects FIRB and D.D.1105.
文摘We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve theextraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunelyfabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extractionefficiency in such devices increases by a factor of 4 at a resonance wavelength.
文摘We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatible with Si technology.The structure allows for a high light-trapping efficiency across the entire visible range,attaining total reflectance values as low as 0.1%when the wavelength in the medium matches the length scale of maximum heterogeneity in the system.We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering,which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence.These strong emissions are correlated on all length scales according to the refractive index fluctuations.The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.
