The past several decades have witnessed great progress in high-performance field effect transistors(FET)as one of the most important electronic compo-nents.At the same time,due to their intrinsic advantages,such as mu...The past several decades have witnessed great progress in high-performance field effect transistors(FET)as one of the most important electronic compo-nents.At the same time,due to their intrinsic advantages,such as multiparameter accessibility,excellent electric signal amplification function,and ease of large-scale manufacturing,FET as tactile sensors for flexible wear-able devices,artificial intelligence,Internet of Things,and other fields to per-ceive external stimuli has also attracted great attention and become a significant field of general concern.More importantly,FET has a unique three-terminal structure,which enables its different components to detect external mechanics through different sensing mechanisms.On one hand,it provides an important platform to shed deep insights into the underlying mechanisms of the tactile sensors.On the other hand,these properties could in turn endow excellent components for the construction of tactile matrix sensor arrays with high quality.With special emphasis on the configuration of FETs,this review classified and summarized structure-optimized FET tactile sensors with gate,dielectric layer,semiconductor layer,and source/drain electrodes as sensing active components,respectively.The working principles and the state-of-the-art protocols in terms of high-performance tactile sensors are detail discussed and highlighted,the innovative pixel distribution and integration analysis of the transistor sensor matrix array concerning flexible electronics are also intro-duced.We hope that the introduction of this review can provide some inspiration for future researchers to design and fabricate high-performance FET-based tactile sensor chips for flexible electronics and other fields.展开更多
神经退行性疾病是人类最难治疗的疾病之一.易获取的间充质干细胞(MSCs)可用于自体干细胞移植,间充质干细胞治疗被认为是最有希望的治疗选择之一.然而,传统的生长诱导因子难以实现间充质干细胞的神经分化.电刺激方式可以诱导间充质干细...神经退行性疾病是人类最难治疗的疾病之一.易获取的间充质干细胞(MSCs)可用于自体干细胞移植,间充质干细胞治疗被认为是最有希望的治疗选择之一.然而,传统的生长诱导因子难以实现间充质干细胞的神经分化.电刺激方式可以诱导间充质干细胞的神经分化,但外部电线和复杂的设备给临床治疗带来了很大阻碍.在这项研究中,基于磁电感应效应,我们发现在无需任何生物或化学因子的辅助下,旋转磁场(RMF)驱动下还原氧化石墨烯膜(rGO-M)上产生的无线电信号可以诱导间充质干细胞的神经元样分化.体外实验结果显示,RMF以400 r min^(-1)的速度刺激rGO-M,每天刺激15 min,rGO-M上的MSCs能表达神经元特异性基因和蛋白,连续处理15天后,基因和蛋白的表达量得到明显提升.大鼠体内实验证实,rGO-M上的外源性间充质干细胞可以在旋转磁场的驱动下分化成神经元样细胞.鉴于rGO-M和自体间充质干细胞来源成本较低,rGO-M介导的无线电刺激方法为神经退行性疾病的干细胞治疗提供了一个可行的方案.展开更多
基金This work was supported by the National Natural Science Foundation of China(51902131)Natural Science Foun-dation of Shandong province(ZR2019BEM006)the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603).
文摘The past several decades have witnessed great progress in high-performance field effect transistors(FET)as one of the most important electronic compo-nents.At the same time,due to their intrinsic advantages,such as multiparameter accessibility,excellent electric signal amplification function,and ease of large-scale manufacturing,FET as tactile sensors for flexible wear-able devices,artificial intelligence,Internet of Things,and other fields to per-ceive external stimuli has also attracted great attention and become a significant field of general concern.More importantly,FET has a unique three-terminal structure,which enables its different components to detect external mechanics through different sensing mechanisms.On one hand,it provides an important platform to shed deep insights into the underlying mechanisms of the tactile sensors.On the other hand,these properties could in turn endow excellent components for the construction of tactile matrix sensor arrays with high quality.With special emphasis on the configuration of FETs,this review classified and summarized structure-optimized FET tactile sensors with gate,dielectric layer,semiconductor layer,and source/drain electrodes as sensing active components,respectively.The working principles and the state-of-the-art protocols in terms of high-performance tactile sensors are detail discussed and highlighted,the innovative pixel distribution and integration analysis of the transistor sensor matrix array concerning flexible electronics are also intro-duced.We hope that the introduction of this review can provide some inspiration for future researchers to design and fabricate high-performance FET-based tactile sensor chips for flexible electronics and other fields.
基金supported by the National Natural Science Foundation of China(51972148,52272212,and 11904131)Shandong Provincial Natural Science Foundation(ZR2020KE056 and ZR2021YQ04)+1 种基金the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)the Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong。
文摘神经退行性疾病是人类最难治疗的疾病之一.易获取的间充质干细胞(MSCs)可用于自体干细胞移植,间充质干细胞治疗被认为是最有希望的治疗选择之一.然而,传统的生长诱导因子难以实现间充质干细胞的神经分化.电刺激方式可以诱导间充质干细胞的神经分化,但外部电线和复杂的设备给临床治疗带来了很大阻碍.在这项研究中,基于磁电感应效应,我们发现在无需任何生物或化学因子的辅助下,旋转磁场(RMF)驱动下还原氧化石墨烯膜(rGO-M)上产生的无线电信号可以诱导间充质干细胞的神经元样分化.体外实验结果显示,RMF以400 r min^(-1)的速度刺激rGO-M,每天刺激15 min,rGO-M上的MSCs能表达神经元特异性基因和蛋白,连续处理15天后,基因和蛋白的表达量得到明显提升.大鼠体内实验证实,rGO-M上的外源性间充质干细胞可以在旋转磁场的驱动下分化成神经元样细胞.鉴于rGO-M和自体间充质干细胞来源成本较低,rGO-M介导的无线电刺激方法为神经退行性疾病的干细胞治疗提供了一个可行的方案.
