In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lase...In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.展开更多
We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP...We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.展开更多
Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a t...Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions.To the best of our knowledge,however,to date,there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range.Here,we report a frequency comb source based on a quantum dot(QD)MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120℃.The two-section passively mode-locked In As QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz(corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain)with a variation of 0.07 GHz in the tone spacing over the tested temperature range.By keeping the saturable absorber reversely biased at-2 V,stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only,providing easy control of the device.At an elevated temperature of 100℃,the device shows a 6 d B comb bandwidth of 4.81 nm and 31 tones with>36 d B optical signal-to-noise ratio.The corresponding relative intensity noise,averaged between 0.5 GHz and 10 GHz,is-146 d Bc∕Hz.Our results show the viability of the In As QD MLLs as ultra-stable,uncooled frequency comb sources for low-cost,large-bandwidth,and low-energy-consumption optical data communications.展开更多
基金financial support from the UK EPSRC under grant No. EP/P006973/1the EPSRC National Epitaxy Facility European project H2020-ICT-PICTURE (780930)+2 种基金the Royal Academy of Engineering (RF201617/16/28)Investissments d’avenir (IRT Nanoelec: ANR-10-IRT-05 and Need for IoT: ANR-15-IDEX-02)the Chinese Scholarship Council for funding
文摘In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/P006973/1)Royal Academy of Engineering(RF201617/16/28)Chinese Scholarship Council
文摘We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
基金Royal Academy of Engineering(RF201617/16/28)Engineering and Physical Sciences Research Council(EP/R041792/1,EP/T01394X/1)。
文摘Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions.To the best of our knowledge,however,to date,there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range.Here,we report a frequency comb source based on a quantum dot(QD)MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120℃.The two-section passively mode-locked In As QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz(corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain)with a variation of 0.07 GHz in the tone spacing over the tested temperature range.By keeping the saturable absorber reversely biased at-2 V,stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only,providing easy control of the device.At an elevated temperature of 100℃,the device shows a 6 d B comb bandwidth of 4.81 nm and 31 tones with>36 d B optical signal-to-noise ratio.The corresponding relative intensity noise,averaged between 0.5 GHz and 10 GHz,is-146 d Bc∕Hz.Our results show the viability of the In As QD MLLs as ultra-stable,uncooled frequency comb sources for low-cost,large-bandwidth,and low-energy-consumption optical data communications.
