Agricultural management practices influence soil health.In this study,agricultural lands of cold arid Hanna village,Balochistan,Pakistan,were studied to assess soil properties and the abundance of soil macrofauna spec...Agricultural management practices influence soil health.In this study,agricultural lands of cold arid Hanna village,Balochistan,Pakistan,were studied to assess soil properties and the abundance of soil macrofauna species.Five orchards,five tree-based intercropping(TBI)systems,two croplands and a barren unprotected rangeland were sampled.Soil properties,such as texture,concentrations of organic matter(SOM),organic carbon(SOC),mineral nitrogen and bioavailable phosphorus,pH and electrical conductivity were analyzed.The abundance and species of soil surface-dwelling and upper soil layer-dwelling(0-5 cm)macrofauna were also measured.Orchards and croplands were older than TBI systems.than the same agricultural systems(cropland or orchards),which were under intense tillage practice or receiving no fertilizer input.Our results demonstrate that the diversified cropping systems with the reduced(shallow)tillage and the amendment of both synthetic and organic fertilizers,promoted soil quality in this cold-winter desert.This study is a source of evidence for the farmers of this region,which highlights the importance of conservation agriculture and crop diversification under TBI system for improving soil quality.It warrants further investigation to evaluate biological indicators of soil health(soil microbial biomass,microbial diversity,microfauna,mesofauna and macrofauna)being influenced by various management practices in this region.Furthermore,the relationship between soil quality and crop production under various management practices in this region needs to be evaluated.Such an extensive study will further help encourage farmers to adopt the best management practice in their fields.展开更多
This review article explores phosphatase and tensin homolog(PTEN)’s role in head and neck squamous cell carcinoma(HNSCC)through comprehensive expression and methylation examinations,genetic mutation investigation,and...This review article explores phosphatase and tensin homolog(PTEN)’s role in head and neck squamous cell carcinoma(HNSCC)through comprehensive expression and methylation examinations,genetic mutation investigation,and prognostic evaluation.Using the UALCAN informational collection,PTEN expression examination uncovered a critical over-expression in HNSCC cells isolated from normal control samples,proposing its role in HNSCC multiplication.Further,analysis of PTEN expression across various clinical limits has shown critical up-regulation in different cancer development stages,racial groups,gender,and age classes within the context of HNSCC patients,suggesting its major role in cancer duplication.PTEN expression was validated by utilizing the GEPIA2.0 online tool,which showed PTEN expression was particularly significantly expressed in HNSCC cancer improvement when it appeared differently from normal control samples.Accordingly,examining PTEN validation across different phases of cancer advancement showed dysregulation in each of the four phases with the most raised expression in stage I and the least expression in stage IV.Thus,this study investigated the promoter methylation level of PTEN,figuring out a basic relationship between HNSCC samples and normal control samples.Analyzing promoter methylation across various clinical limits uncovered massive variations,with specific methylation patterns seen across malignant growth stages,race groups,gender,and age groups.Overall survival and disease-free survival(OS and DFS)utilizing the KM plotter tool showed a critical relationship between PTEN expression levels in HNSCC patients,showing high PTEN expression exhibited good overall survival when showed up distinctively comparable to low PTEN expression levels.In addition,in disease-free survival(DFS)evaluation HNSCC patients showing low PTEN expression experienced great DFS relative to HNSCC patients with high PTEN expression.Moreover,to validate PTEN expression against survival,the study examined the HNSCC patients into low and high-expression groups of PTEN.In HNSCC,low PTEN expression was connected with great overall survival(OS)when it appeared contrastingly relative to the high PTEN expression.In like manner,the study found that low PTEN expression level was connected with great DFS in HNSCC when it appeared contrastingly related to the high PTEN expression group.Genetic mutation analysis via cBioPortal identifies a minimal proportion of PTEN mutations in HNSCC,predominantly in-frame mutation,missense mutation,splice mutation,truncating mutation,and structural variant,indicating their basal significance in PTEN dysregulation within HNSCC.Further investigation of PTEN molecular components and their exchange inside the HNSCC microenvironment might disclose novel roads for designated treatment and accurate medication approaches in battling this harmful disease.展开更多
Zinc telluride is a versatile wide band gap semiconductor used in many applications.But it has certain limitations like large dimensions and large band gaps.Introducing alkali metal to its bulk lattice(3D)can reduce i...Zinc telluride is a versatile wide band gap semiconductor used in many applications.But it has certain limitations like large dimensions and large band gaps.Introducing alkali metal to its bulk lattice(3D)can reduce its dimensions and lanthanide can produce a red shift in the energy gap by converting it into quaternary compounds.The alkali and lanthanide incorporated quaternary zinc tellurides CsLnZnTe_(3)(Ln=La,Pr,Nd and Sm)form layered crystal structure in which_(∞)^(2)[LnZnTe_(3)]-layers are separated by Cs+layer.The famous lanthanide contraction is experimental both from lattice constants and bond lengths.The calculated band gaps are 2.26,2.28,2.12,2.05 eV for CsLaZnTe_(3),CsPrZnTe_(3),CsNdZnTe_(3) and CsSmZnTe_(3),respectively.These compounds show direct band gap nature.The energy band gaps of these compounds have not been evaluated yet both experimentally and theoretically.Energy loss functions,refractive index and dielectric functions were also calculated to explore the potential applications of CsLnZnTe_(3) in optoelectronic devices.展开更多
P-type (100) oriented silicon wafers were etched with vapors of concentrated Hydrofluoric acid in a reaction chamber under continuous vapor-flow at standard temperature and pressure. The surface morphology of the etch...P-type (100) oriented silicon wafers were etched with vapors of concentrated Hydrofluoric acid in a reaction chamber under continuous vapor-flow at standard temperature and pressure. The surface morphology of the etched samples was examined by scanning electron microscope and pore size analyzer. The radius of the pores and quantum dots were found to be 6 nm and 4 nm respectively. Etched samples emitted red luminescence when exposed to ultra violet (UV) light. The red luminescence emitted by the etched surface has been assigned to energy states induced by quantum confinement of holes.展开更多
Silicon wafers (p-type) were etched under continuous flow of HF vapors in a reaction chamber at standard temperature and pressure. Etched surface of the silicon wafer was found emitting red luminescence when exposed t...Silicon wafers (p-type) were etched under continuous flow of HF vapors in a reaction chamber at standard temperature and pressure. Etched surface of the silicon wafer was found emitting red luminescence when exposed to ultra violet (UV) light. XRD and Atomic Force Microscopy of the etched samples were carried out to study the surface of the etched silicon. It is noticed that etching has removed the stress induced atomic layers of silicon at grain boundaries and layer of porous silicon has been formed at the surface of silicon wafer which has higher inter planer distance than the silicon itself. The size of dots observed on the surface of etched silicon is of the order of few nm. The red emission from the surface of etched silicon appears to be due to the energy states induced by quantum confinement.展开更多
Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to en...Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10-16, 6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and 2.1 × 10-16 cm2. Corresponding concentrations of defects were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 × 1013 and 3.1 × 1013 cm-3.展开更多
Structural geometry, electronic band gaps, density of states, optical and mechanical properties of double perovskite halides Cs2InBiX6(X = F, Cl, Br, I) are investigated using the density functional theory. These comp...Structural geometry, electronic band gaps, density of states, optical and mechanical properties of double perovskite halides Cs2InBiX6(X = F, Cl, Br, I) are investigated using the density functional theory. These compounds possess genuine perovskite stoichiometry, evaluated using various geometry-based indices like tolerance factor, octahedral factor, and formation energy. The fundamental electronic band gaps are direct and valued in the range 0.80–2.79 e V. These compounds have narrow band gaps(except Cs2InBiX6) due to strong orbital coupling of the cations. The valence band maximum and conduction band minimum are confirmed to be essentially of In 5 s and Bi 6 p characters, respectively. The splitting of Bi 6 p bands due to strong spin-orbit coupling causes reduction in the band gaps. These compounds have large dispersion in their bands and very low carrier effective masses. The substitution of halogen atoms has great influence on the optical properties. The mechanical properties reveal that Cs2InBiX6(X = F, Cl, Br, I) satisfy the stability criteria in cubic structures.展开更多
文摘Agricultural management practices influence soil health.In this study,agricultural lands of cold arid Hanna village,Balochistan,Pakistan,were studied to assess soil properties and the abundance of soil macrofauna species.Five orchards,five tree-based intercropping(TBI)systems,two croplands and a barren unprotected rangeland were sampled.Soil properties,such as texture,concentrations of organic matter(SOM),organic carbon(SOC),mineral nitrogen and bioavailable phosphorus,pH and electrical conductivity were analyzed.The abundance and species of soil surface-dwelling and upper soil layer-dwelling(0-5 cm)macrofauna were also measured.Orchards and croplands were older than TBI systems.than the same agricultural systems(cropland or orchards),which were under intense tillage practice or receiving no fertilizer input.Our results demonstrate that the diversified cropping systems with the reduced(shallow)tillage and the amendment of both synthetic and organic fertilizers,promoted soil quality in this cold-winter desert.This study is a source of evidence for the farmers of this region,which highlights the importance of conservation agriculture and crop diversification under TBI system for improving soil quality.It warrants further investigation to evaluate biological indicators of soil health(soil microbial biomass,microbial diversity,microfauna,mesofauna and macrofauna)being influenced by various management practices in this region.Furthermore,the relationship between soil quality and crop production under various management practices in this region needs to be evaluated.Such an extensive study will further help encourage farmers to adopt the best management practice in their fields.
文摘This review article explores phosphatase and tensin homolog(PTEN)’s role in head and neck squamous cell carcinoma(HNSCC)through comprehensive expression and methylation examinations,genetic mutation investigation,and prognostic evaluation.Using the UALCAN informational collection,PTEN expression examination uncovered a critical over-expression in HNSCC cells isolated from normal control samples,proposing its role in HNSCC multiplication.Further,analysis of PTEN expression across various clinical limits has shown critical up-regulation in different cancer development stages,racial groups,gender,and age classes within the context of HNSCC patients,suggesting its major role in cancer duplication.PTEN expression was validated by utilizing the GEPIA2.0 online tool,which showed PTEN expression was particularly significantly expressed in HNSCC cancer improvement when it appeared differently from normal control samples.Accordingly,examining PTEN validation across different phases of cancer advancement showed dysregulation in each of the four phases with the most raised expression in stage I and the least expression in stage IV.Thus,this study investigated the promoter methylation level of PTEN,figuring out a basic relationship between HNSCC samples and normal control samples.Analyzing promoter methylation across various clinical limits uncovered massive variations,with specific methylation patterns seen across malignant growth stages,race groups,gender,and age groups.Overall survival and disease-free survival(OS and DFS)utilizing the KM plotter tool showed a critical relationship between PTEN expression levels in HNSCC patients,showing high PTEN expression exhibited good overall survival when showed up distinctively comparable to low PTEN expression levels.In addition,in disease-free survival(DFS)evaluation HNSCC patients showing low PTEN expression experienced great DFS relative to HNSCC patients with high PTEN expression.Moreover,to validate PTEN expression against survival,the study examined the HNSCC patients into low and high-expression groups of PTEN.In HNSCC,low PTEN expression was connected with great overall survival(OS)when it appeared contrastingly relative to the high PTEN expression.In like manner,the study found that low PTEN expression level was connected with great DFS in HNSCC when it appeared contrastingly related to the high PTEN expression group.Genetic mutation analysis via cBioPortal identifies a minimal proportion of PTEN mutations in HNSCC,predominantly in-frame mutation,missense mutation,splice mutation,truncating mutation,and structural variant,indicating their basal significance in PTEN dysregulation within HNSCC.Further investigation of PTEN molecular components and their exchange inside the HNSCC microenvironment might disclose novel roads for designated treatment and accurate medication approaches in battling this harmful disease.
基金the Chinese Scholarship Council(CSC)in conjunction with the Integrated Marine Biosphere Research(IMBeR)Project initiated by East China Normal University(ECNU)。
基金the Deanship of Scientific Research at King Khalid University for funding this work through research groups program under grant number(RGP.2/141/43)。
文摘Zinc telluride is a versatile wide band gap semiconductor used in many applications.But it has certain limitations like large dimensions and large band gaps.Introducing alkali metal to its bulk lattice(3D)can reduce its dimensions and lanthanide can produce a red shift in the energy gap by converting it into quaternary compounds.The alkali and lanthanide incorporated quaternary zinc tellurides CsLnZnTe_(3)(Ln=La,Pr,Nd and Sm)form layered crystal structure in which_(∞)^(2)[LnZnTe_(3)]-layers are separated by Cs+layer.The famous lanthanide contraction is experimental both from lattice constants and bond lengths.The calculated band gaps are 2.26,2.28,2.12,2.05 eV for CsLaZnTe_(3),CsPrZnTe_(3),CsNdZnTe_(3) and CsSmZnTe_(3),respectively.These compounds show direct band gap nature.The energy band gaps of these compounds have not been evaluated yet both experimentally and theoretically.Energy loss functions,refractive index and dielectric functions were also calculated to explore the potential applications of CsLnZnTe_(3) in optoelectronic devices.
文摘P-type (100) oriented silicon wafers were etched with vapors of concentrated Hydrofluoric acid in a reaction chamber under continuous vapor-flow at standard temperature and pressure. The surface morphology of the etched samples was examined by scanning electron microscope and pore size analyzer. The radius of the pores and quantum dots were found to be 6 nm and 4 nm respectively. Etched samples emitted red luminescence when exposed to ultra violet (UV) light. The red luminescence emitted by the etched surface has been assigned to energy states induced by quantum confinement of holes.
文摘Silicon wafers (p-type) were etched under continuous flow of HF vapors in a reaction chamber at standard temperature and pressure. Etched surface of the silicon wafer was found emitting red luminescence when exposed to ultra violet (UV) light. XRD and Atomic Force Microscopy of the etched samples were carried out to study the surface of the etched silicon. It is noticed that etching has removed the stress induced atomic layers of silicon at grain boundaries and layer of porous silicon has been formed at the surface of silicon wafer which has higher inter planer distance than the silicon itself. The size of dots observed on the surface of etched silicon is of the order of few nm. The red emission from the surface of etched silicon appears to be due to the energy states induced by quantum confinement.
文摘Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10-16, 6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and 2.1 × 10-16 cm2. Corresponding concentrations of defects were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 × 1013 and 3.1 × 1013 cm-3.
文摘Structural geometry, electronic band gaps, density of states, optical and mechanical properties of double perovskite halides Cs2InBiX6(X = F, Cl, Br, I) are investigated using the density functional theory. These compounds possess genuine perovskite stoichiometry, evaluated using various geometry-based indices like tolerance factor, octahedral factor, and formation energy. The fundamental electronic band gaps are direct and valued in the range 0.80–2.79 e V. These compounds have narrow band gaps(except Cs2InBiX6) due to strong orbital coupling of the cations. The valence band maximum and conduction band minimum are confirmed to be essentially of In 5 s and Bi 6 p characters, respectively. The splitting of Bi 6 p bands due to strong spin-orbit coupling causes reduction in the band gaps. These compounds have large dispersion in their bands and very low carrier effective masses. The substitution of halogen atoms has great influence on the optical properties. The mechanical properties reveal that Cs2InBiX6(X = F, Cl, Br, I) satisfy the stability criteria in cubic structures.
