The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emit...The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emitter to cavity within photonic circuitry towards creation of the Purcell-enhanced single-photon emission is elusive due to the complexity of integrating active devices in low-loss photonic circuits.Here we demonstrate a hybrid micro-ring resonator(HMRR)coupled with self-assembled quantum dots(QDs)for cavity-enhanced deterministic single-photon emission.The HMRR cavity supports whispering-gallery modes with quality factors up to 7.8×103.By further introducing a micro-heater,we show that the photon emission of QDs can be locally and dynamically tuned over one free spectral ranges of the HMRR(~4 nm).This allows precise tuning of individual QDs in resonance with the cavity modes,thereby enhancing single-photon emission with a Purcell factor of about 4.9.Our results on the hybrid integrated cavities coupled with two-level quantum emitters emerge as promising devices for chip-based scalable photonic quantum applications.展开更多
Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progr...Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progress in ferroelectric thin films,particularly thin-film lithium niobate(LiNbO_(3))and thin-film lithium tantalate(LiTaO_(3)),has significantly advanced electro-optic(EO)modulation and soliton microcombs generation,leveraging their strong third-order nonlinearity and high Pockels coefficients.However,achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena.These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation.Here,following the thermal-regulated carrier behavior and auxiliary-laser-assisted approach,we propose a convenient mechanism to suppress both photorefractive and thermal dragging effects at once,and implement a facile method for soliton formation and its longterm stabilization in integrated X-cut LiTaO_(3) microresonators for the first time,to the best of our knowledge.The resulting mode-locked states exhibit robust stability against perturbations,enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.展开更多
The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable ob...The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.展开更多
Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-worl...Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume.Silicon nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.Other materials have emerged such as AlN,LiNbO_(3),AlGaAs and GaP that exhibit simultaneous second-and third-order nonlinearities.Here,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear photonics.High-quality-factor microresonators(Q=4×10^(6))are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is generated.In addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC.Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.展开更多
The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realiz...The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.展开更多
基金support from National Key R&D Program of China(2022YFA1404604)Chinese Academy of Sciences Project for Young Scientists in Basic Research(No.YSBR-112),Science and Technology Commission of Shanghai Municipality(16ZR1442600,20JC1416200)+6 种基金National Natural Science Foundation of China(Nos.12074400,U1732268,62293521,61874128,61851406,11774326 and 11705262)the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB0670303)Shanghai Science and Technology Innovation Action Plan Program(20JC1416200,22JC1403300)Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032),Innovation Program for Quantum Science and Technology(No.2021ZD0300204)Shanghai Municipal Science and Technology Major Project(No.2019SHZDZX01)Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits(No.SKLJCZ2024-B03)State Key Laboratory of Advanced Optical Communication Systems and Networks(No.2024GZKF11).
文摘The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emitter to cavity within photonic circuitry towards creation of the Purcell-enhanced single-photon emission is elusive due to the complexity of integrating active devices in low-loss photonic circuits.Here we demonstrate a hybrid micro-ring resonator(HMRR)coupled with self-assembled quantum dots(QDs)for cavity-enhanced deterministic single-photon emission.The HMRR cavity supports whispering-gallery modes with quality factors up to 7.8×103.By further introducing a micro-heater,we show that the photon emission of QDs can be locally and dynamically tuned over one free spectral ranges of the HMRR(~4 nm).This allows precise tuning of individual QDs in resonance with the cavity modes,thereby enhancing single-photon emission with a Purcell factor of about 4.9.Our results on the hybrid integrated cavities coupled with two-level quantum emitters emerge as promising devices for chip-based scalable photonic quantum applications.
基金National Key Research and Development Program of China(2022YFA1404601)National Natural Science Foundation of China(62293520,62293521,12074400,62205363,12104442,12404446,12293052)+4 种基金Shanghai Science and Technology Innovation Action Plan Program(20JC1416200,22JC1403300)CAS Project for Young Scientists in Basic Research(YSBR-69)Natural Science Foundation of Anhui Province(2408085QA010)China Postdoctoral Science Foundation(2024M753078)Postdoctoral Fellowship Program of CPSF(GZC20232560)。
文摘Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progress in ferroelectric thin films,particularly thin-film lithium niobate(LiNbO_(3))and thin-film lithium tantalate(LiTaO_(3)),has significantly advanced electro-optic(EO)modulation and soliton microcombs generation,leveraging their strong third-order nonlinearity and high Pockels coefficients.However,achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena.These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation.Here,following the thermal-regulated carrier behavior and auxiliary-laser-assisted approach,we propose a convenient mechanism to suppress both photorefractive and thermal dragging effects at once,and implement a facile method for soliton formation and its longterm stabilization in integrated X-cut LiTaO_(3) microresonators for the first time,to the best of our knowledge.The resulting mode-locked states exhibit robust stability against perturbations,enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.
基金National Key R&D Program of China(2017YFE0131300,2019YFA0705000)National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,11705262,11905282,12004116,12074400,and 11734009)+4 种基金Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032)Chinese-Austrian Cooperative R&D Project(No.GJHZ201950)Program of Shanghai Academic Research Leader(19XD1404600)Shanghai Sailing Program(No.19YF1456200,19YF1456400)K.C.Wong Education Foundation(GJTD-2019-11).
文摘The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
基金supported by National Key R&D Program of China(2022YFA1404600,2017YFE0131300,and 2019YFA0705000)National Natural Science Foundation of China(No.62293520,62293521,61874128,11705262,11905282,12004116,12074400,11934012,62205363,and 11734009)+7 种基金Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032)Chinese-Austrian Cooperative R&D Project(No.GJHZ 201950)Shanghai Sailing Program(No.19YF1456200,19YF1456400)K.C.Wong Education Foundation(GJTD-2019-11)the Key Research Project of Zhejiang Laboratory under Grant 2021MD0AC01Science and Technology Commission of Shanghai Municipality(NO.21DZ1101500)Strategic Priority Research Program of the CAS(XDC07030200)Shanghai Science and Technology Innovation Action Plan Program(22JC1403300).
文摘Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume.Silicon nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.Other materials have emerged such as AlN,LiNbO_(3),AlGaAs and GaP that exhibit simultaneous second-and third-order nonlinearities.Here,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear photonics.High-quality-factor microresonators(Q=4×10^(6))are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is generated.In addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC.Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.
基金This work was supported by the National Key Research and Development Program of China(Nos.2017YFE0131300 and 2019YFB1803901)National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,12074400,11705262,and 11905282)+7 种基金Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032)Shanghai Key Basic Research Program(No.20JC1416200)Program of Shanghai Academic Research Leader(Nos.9XD1404600 and 19XD1404600)Shanghai Rising-Star Program(No.19QA1410600)Shanghai Sailing Program(No.18YF1428100)Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03)Strategic Priority Research Program of Chinese Academy of Sci-ences(Nos.XDB24020400 and XDB0000000)Science and Technology Comission of Shanghai Municipality(No.16ZR1442600).
文摘The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
