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反应溅射TiW_yN_x薄膜扩散势垒特性研究
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作者 张国炳 武国英 +7 位作者 徐立 郝一龙 隋小平 a.p.clarke P.J.Clarke M.D.Strathman T.Gates S.Baumann 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1993年第11期702-707,T001,共7页
本文利用XRD、RBS、AES、SEM和电学测量技术系统地研究了反应溅射制备的TiW_yN_x薄膜的组份、结构和扩散势垒特性,实验结果表明,膜的组份、结构和特性受溅射时N_2流量影响和溅射功率的影响,这种TiW_yN_x膜经550℃30分钟退火后,仍能有效... 本文利用XRD、RBS、AES、SEM和电学测量技术系统地研究了反应溅射制备的TiW_yN_x薄膜的组份、结构和扩散势垒特性,实验结果表明,膜的组份、结构和特性受溅射时N_2流量影响和溅射功率的影响,这种TiW_yN_x膜经550℃30分钟退火后,仍能有效防止Al-Si扩散,从而改善了Al/TiW_yN_x/CoSi_2/Si浅结接触的热稳定性。 展开更多
关键词 TiWN薄膜 扩散 反应溅射 集成电路
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CARBON FILMS PREPARED BY S-GUN MAGNETRON SPUTTERING USING GRAPHITE TARGET 被引量:1
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作者 a.p.clarke P.J.Clarke 《真空科学与技术学报》 EI CAS CSCD 1992年第Z1期155-158,共4页
Thin amorphous films of Carbon have been deposited by DC S-gun magnetron sputtering using a graphite.The thickness of films in the range of 100 to 200nm were depositod over a pressure range of 0.4 to 8.0 mtorr (Ar fio... Thin amorphous films of Carbon have been deposited by DC S-gun magnetron sputtering using a graphite.The thickness of films in the range of 100 to 200nm were depositod over a pressure range of 0.4 to 8.0 mtorr (Ar fiow rate in range 1.0 to 20 sccm)on SiO2 and Si substrates. The structure and properties of carbon were studied by four point probe, profilometer, automatic ellipsometer,X-ray diffraction, AES, SEM and electron energy-loss spectroscapy (EELS).The electrical resistivity of a-C films was reduced from about 2.5 Ωcm at 8.0 mTorr pressure to a value 1.6E-2Ωcm at 0.4 mTorr pressure.The index of refraction increased from 2.4 at 0.SmTorr to 1.7 at 8.0 mTorr.It has been shown from results that the structure and properties of sputtered carbon films are strongly influenced by the condition of deposition procoss. 展开更多
关键词 井下 百万
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