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Ultra-Modified Control Algorithms for Matrix Converter in Wind Energy System
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作者 Kotb B.Tawfiq a.m.mansour E.E.EL-Kholy 《Journal of Physical Science and Application》 2018年第2期28-42,共15页
This paper proposes an ultra-modified SSA(symmetric sequence algorithm)of space vector modulation of MC(matrix converter).The ultra-modified technique improves the drawbacks of the modified one where it provides a red... This paper proposes an ultra-modified SSA(symmetric sequence algorithm)of space vector modulation of MC(matrix converter).The ultra-modified technique improves the drawbacks of the modified one where it provides a reduction of the total harmonic distortion for both output voltage and current.Also this paper proposes a modified feed forward controller of the MC with indirect space vector modulation.The modified feed forward provides a solution for the change in the output voltage due to change in wind speed,where it provides a constant output voltage with constant frequency even if the wind speed changed.Some of the advantages of MC are introduced in this paper.These advantages represented in the output frequency of MC which may be greater than the input frequency,controlling rms value of the output voltage and the ability to control the IDF(input displacement factor).At the end of this paper simulation and experimental results are introduced which give a precise proof to the proposed algorithms. 展开更多
关键词 MC SSA modifed FEED FORWARD control WECS(wind energy conversion system)
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Fabrication,electrical and photovoltaic characteristics of CuInGeSe4/n-Si diode
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作者 I.M.E1Radar a.m.mansour G.B.Sakr 《Journal of Semiconductors》 EI CAS CSCD 2018年第12期114-119,共6页
The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuI... The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark. 展开更多
关键词 CuInGeSe_4 electron beam deposition series resistance rectification ideality factor
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