Undoped and Be-doped InAs（1–x）Sbx（0 ≤ x ≤ 0.71） epitaxial layers were successfully grown on lattice mismatched semi-insulating Ga As（001） substrate with 2° offcut towards 〈110〉. The effect of the In As...Undoped and Be-doped InAs（1–x）Sbx（0 ≤ x ≤ 0.71） epitaxial layers were successfully grown on lattice mismatched semi-insulating Ga As（001） substrate with 2° offcut towards 〈110〉. The effect of the In As buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the In As Sb epilayers.In addition, the p-type doping of the grown layers was explored. The In As Sb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The In As buffer layer was found to be beneficial for the growth of high quality In As Sb layers. The X-ray analysis revealed a full width at half maximum（FWHM） of 571 arcsec for In As0.87 Sb0.13. It is worth noting here that the Hall concentration（mobility） as low（high） as 5 × 10^（16）cm^（-3）（25000 cm^2 V^（-1）s^（-1）） at room temperature, has been acquired.展开更多
基金Project supported by the Polish National Science Centre(No.UMO-2015/17/B/ST5/01753)
文摘Undoped and Be-doped InAs（1–x）Sbx（0 ≤ x ≤ 0.71） epitaxial layers were successfully grown on lattice mismatched semi-insulating Ga As（001） substrate with 2° offcut towards 〈110〉. The effect of the In As buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the In As Sb epilayers.In addition, the p-type doping of the grown layers was explored. The In As Sb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The In As buffer layer was found to be beneficial for the growth of high quality In As Sb layers. The X-ray analysis revealed a full width at half maximum（FWHM） of 571 arcsec for In As0.87 Sb0.13. It is worth noting here that the Hall concentration（mobility） as low（high） as 5 × 10^（16）cm^（-3）（25000 cm^2 V^（-1）s^（-1）） at room temperature, has been acquired.
