Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination...Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination and annealing was used for modifying morphological and structural properties that lead to changes of the optical properties.The resulting films show morphology of tilted nanocolumn,fissures among columns,and structural changes.The as-deposited films are structurally disordered with an amorphous component and the annealed films are crystallized and more ordered and the film diffractograms correspond to the cubic structure of In2O3.The refractive index could be modified up to 0.3 in as-deposited films and up to 0.15 in annealed films as functions of the inclination angle of the nanocolumns.Similarly,the band gap energy increases up to about 0.4 eV due to the reduction of the microstrain distribution.It is found that the microstrain distribution,which is related to lattice distortions,defects and the presence of fissures in the films,is the main feature that can be engineered through morphological modifications for achieving the adjustment of the optical properties.展开更多
Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were in...Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.展开更多
基金supported by the Project No.CB/2012/178748 CONACYT/México
文摘Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination and annealing was used for modifying morphological and structural properties that lead to changes of the optical properties.The resulting films show morphology of tilted nanocolumn,fissures among columns,and structural changes.The as-deposited films are structurally disordered with an amorphous component and the annealed films are crystallized and more ordered and the film diffractograms correspond to the cubic structure of In2O3.The refractive index could be modified up to 0.3 in as-deposited films and up to 0.15 in annealed films as functions of the inclination angle of the nanocolumns.Similarly,the band gap energy increases up to about 0.4 eV due to the reduction of the microstrain distribution.It is found that the microstrain distribution,which is related to lattice distortions,defects and the presence of fissures in the films,is the main feature that can be engineered through morphological modifications for achieving the adjustment of the optical properties.
文摘Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.
