Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. T...Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012cm Hz1∕2W-1at 5 V bias. Furthermore,the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.展开更多
基金supported by the Air Force Office of Scientific Research (Grant No. FA9550-10-1-0136)NASA (Grant No. 242026-1BBX11AQ36A)+1 种基金supported by a University of Arkansas Honors College Undergraduate Research grantthe Microelectronics–Photonics program at the University of Arkansas for the COMSOL license
文摘Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012cm Hz1∕2W-1at 5 V bias. Furthermore,the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.
