Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexibleelectronics.The Young’s modulus,a measure of how easily a material deforms,plays a critical role inthe coupled deformat...Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexibleelectronics.The Young’s modulus,a measure of how easily a material deforms,plays a critical role inthe coupled deformation of a crystal on a flexible substrate,as well as the transfer of strain from thesubstrate onto the layer.Here,we report on the bending behaviour of gallium selenide(GaSe),a van derWaals semiconductor with a small Young’s modulus and strain-dependent electronic band structure.A controllable,reproducible uniaxial strain,ϵ,is applied to nanometer-thick GaSe layers via theirbending on a mica substrate.The spectral shiftΔE of the room temperature photoluminescenceemission with increasing strain has a large associated strain coefficientΔE/ϵ.This is accompanied bycoupled electronic and vibrational states under strain-induced resonant excitation conditions,asprobed by Raman spectroscopy.展开更多
In the original version of the article in Figs.2,3 and 4 and corresponding text,the value of the strain is estimated for different bending radii,r,of the mica,i.e.the strain is calculated as t/2r,where t=0.03 mm is th...In the original version of the article in Figs.2,3 and 4 and corresponding text,the value of the strain is estimated for different bending radii,r,of the mica,i.e.the strain is calculated as t/2r,where t=0.03 mm is the thickness of the mica.For example,for r=4 cm,t/2r=0.04%.However,as shown in Fig.展开更多
基金supported by the Engineering and Physical Sciences Research Council(Grant Nos.EP/T019018/1)。
文摘Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexibleelectronics.The Young’s modulus,a measure of how easily a material deforms,plays a critical role inthe coupled deformation of a crystal on a flexible substrate,as well as the transfer of strain from thesubstrate onto the layer.Here,we report on the bending behaviour of gallium selenide(GaSe),a van derWaals semiconductor with a small Young’s modulus and strain-dependent electronic band structure.A controllable,reproducible uniaxial strain,ϵ,is applied to nanometer-thick GaSe layers via theirbending on a mica substrate.The spectral shiftΔE of the room temperature photoluminescenceemission with increasing strain has a large associated strain coefficientΔE/ϵ.This is accompanied bycoupled electronic and vibrational states under strain-induced resonant excitation conditions,asprobed by Raman spectroscopy.
文摘In the original version of the article in Figs.2,3 and 4 and corresponding text,the value of the strain is estimated for different bending radii,r,of the mica,i.e.the strain is calculated as t/2r,where t=0.03 mm is the thickness of the mica.For example,for r=4 cm,t/2r=0.04%.However,as shown in Fig.
