We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate.A rigoro...We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate.A rigorous noise model of the receiver has been developed for this purpose.We calculate the total noise and sensitivity of the receiver.The front-end of the receiver exhibits a sensitivity of -45 dBm at a bit rate of 1 Gb/s and -30 dBm at a bit rate of 10 Gb/s,and the total mean-square noise curren t〈i2n〉=5×10-15 A2 at a bit rate of 1 Gb/s an d〈i2n〉 =10-12 A2 at a bit rate of 10 Gb/s,and a 3-dB bandwidth of 10 GHz.展开更多
This paper presents the fabrication,characterization and numerical simulation of poly-3-hexylthiophene(P3HT)-based bottom-gate bottom-contact(BGBC)organic thin film transistors(OTFTs).The simulation is based on a drif...This paper presents the fabrication,characterization and numerical simulation of poly-3-hexylthiophene(P3HT)-based bottom-gate bottom-contact(BGBC)organic thin film transistors(OTFTs).The simulation is based on a drift diffusion charge transport model and density of defect states(DOS)for the traps in the band gap of the P3HT based channel.It combines two mobility models,a hopping mobility model and the Poole-Frenkel mobility model.It also describes the defect density of states(DOS)for both tail and deep states.The model takes into account all the operating regions of the OTFT and includes sub-threshold and above threshold characteristics of OTFTs.The model has been verified by comparing the numerically simulated results with the experimental results.This model is also used to simulate different structure in four configurations of OTFT e.g.bottom-gate bottom-contact(BGBC),bottom-gate top-contact(BGTC),top-gate bottom-contact(TGBC)and top-gate top-contact(TGTC)configurations of the OTFTs.We also present the compact modeling and model parameter extraction of the P3HT-based OTFTs.The extracted compact model has been further applied in a p-channel OTFT-based inverter and three stage ring oscillator circuit simulation.展开更多
文摘We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate.A rigorous noise model of the receiver has been developed for this purpose.We calculate the total noise and sensitivity of the receiver.The front-end of the receiver exhibits a sensitivity of -45 dBm at a bit rate of 1 Gb/s and -30 dBm at a bit rate of 10 Gb/s,and the total mean-square noise curren t〈i2n〉=5×10-15 A2 at a bit rate of 1 Gb/s an d〈i2n〉 =10-12 A2 at a bit rate of 10 Gb/s,and a 3-dB bandwidth of 10 GHz.
基金SERB,DST Government of India.The authors are thankful to SERB,DST Government of India for the financial support under Early Career Research Award(ECRA)for Project No.ECR/2017/000179。
文摘This paper presents the fabrication,characterization and numerical simulation of poly-3-hexylthiophene(P3HT)-based bottom-gate bottom-contact(BGBC)organic thin film transistors(OTFTs).The simulation is based on a drift diffusion charge transport model and density of defect states(DOS)for the traps in the band gap of the P3HT based channel.It combines two mobility models,a hopping mobility model and the Poole-Frenkel mobility model.It also describes the defect density of states(DOS)for both tail and deep states.The model takes into account all the operating regions of the OTFT and includes sub-threshold and above threshold characteristics of OTFTs.The model has been verified by comparing the numerically simulated results with the experimental results.This model is also used to simulate different structure in four configurations of OTFT e.g.bottom-gate bottom-contact(BGBC),bottom-gate top-contact(BGTC),top-gate bottom-contact(TGBC)and top-gate top-contact(TGTC)configurations of the OTFTs.We also present the compact modeling and model parameter extraction of the P3HT-based OTFTs.The extracted compact model has been further applied in a p-channel OTFT-based inverter and three stage ring oscillator circuit simulation.
