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THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS
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作者 T. Yu D.S. Wang +4 位作者 D. Wu a.d. li A. Hu Z.G. liu N.B. Ming 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2002年第1期58-60,共3页
The hysteresis loop changes of ferroelecric SrBi_2 Ta_2 O_9 (SBT) thin films(330nm) us the temperature of forming gas (5 percent hydrogen+95 percent nitrogen) annealing weremeasured when the annealing time was 1min an... The hysteresis loop changes of ferroelecric SrBi_2 Ta_2 O_9 (SBT) thin films(330nm) us the temperature of forming gas (5 percent hydrogen+95 percent nitrogen) annealing weremeasured when the annealing time was 1min and 10min. The selected annealing temperature was at 100deg C,200 deg C 250 deg C, 300 deg C, 350 deg C,400 deg C and 450 deg C, respectively. Our resultsshowed that the ferroelectric properties were easily destroyed and the leakage current changedabruptly when the SBT thin films were in their ferroelectric phase (<270 deg C). The space chargesat the grain boundary may take an important role' in absorption polarity molecular hydrogen when theSBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performedand investigated in this work. 展开更多
关键词 FERROELECTRIC SrBi_2 Ta_2 O_9 thin film stability forming gas
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